onsemi

MJD117-1G

MJD117-1G Description

The MJD117-1G is a PNP Darlington transistor from onsemi, designed for high-power applications. With a maximum collector current of 2A and a collector-emitter breakdown voltage of 100V, this device offers excellent performance in a variety of electronic circuits. The MJD117-1G features a 25MHz frequency transition, making it suitable for high-speed applications. Its maximum power rating of 1.75W ensures reliable operation in demanding environments.

MJD117-1G Features

• 25MHz frequency transition for high-speed applications
• Maximum collector current of 2A for high-power handling
• Collector-emitter breakdown voltage of 100V for reliable operation
• Maximum power rating of 1.75W for demanding environments
• DC current gain (hFE) of 1000 at 2A, 3V for consistent performance
• Vce saturation of 3V at 40mA, 4A for efficient operation
• Through-hole mounting type for easy integration
• Tube package for compact design
• RoHS3 compliant for environmental sustainability
• REACH unaffected for regulatory compliance
• Moisture sensitivity level (MSL) of 1 for unlimited storage

MJD117-1G Applications

The MJD117-1G is ideal for a variety of applications, including:

1. Power amplifiers: Its high-power handling capabilities make it suitable for use in power amplifier circuits.
2. Switching applications: The MJD117-1G's high current gain and low saturation voltage make it an excellent choice for switching applications.
3. Automotive electronics: The device's high voltage and power ratings make it suitable for use in automotive electronics, such as ignition systems and power windows.
4. Industrial control systems: The MJD117-1G's robust performance and reliability make it ideal for use in industrial control systems, such as motor drives and process control.

Conclusion of MJD117-1G

The MJD117-1G is a high-performance PNP Darlington transistor from onsemi, offering excellent power handling and reliability in a compact package. Its unique features, such as high frequency transition and low saturation voltage, make it an ideal choice for a variety of applications, including power amplifiers, switching applications, automotive electronics, and industrial control systems. Despite being classified as obsolete, the MJD117-1G remains a valuable option for engineers seeking a reliable and high-performance transistor solution.