onsemi_MJD200G
original

onsemi
MJD200G

276-MJD200G
PDF Datasheet
NPN BJT 25V 5A DPAK Power Transistor
6 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
1.8V
Current Rating
5A
Emitter Base Voltage (VEBO)
8V
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MJD200G Description

MJD200G Description

The MJD200G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. Packaged in a DPAK (TO-252) surface-mount form factor, it offers a collector-emitter voltage (VCE) rating of 25V and a maximum collector current (IC) of 5A, making it suitable for medium-power circuits. With a transition frequency (fT) of 65MHz, it balances speed and efficiency, while its low VCE(sat) of 1.8V at 5A ensures minimal power loss in saturated switching conditions. The device is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

MJD200G Features

  • High Current Handling: 5A continuous collector current for demanding loads.
  • Low Saturation Voltage: 1.8V @ 5A reduces conduction losses in switching applications.
  • Fast Switching: 65MHz transition frequency enables efficient high-speed operation.
  • High DC Current Gain (hFE): Minimum 45 @ 2A, 1V ensures reliable amplification.
  • Robust Packaging: DPAK (TO-252) offers superior thermal performance and mechanical durability.
  • Environmental Compliance: ROHS3 and REACH unaffected, suitable for eco-conscious designs.
  • Low Leakage Current: Collector cutoff current (ICBO) of just 100nA enhances efficiency.

MJD200G Applications

  • Power Management: Ideal for DC-DC converters, voltage regulators, and load switches.
  • Motor Control: Suitable for driving small motors in automotive and industrial systems.
  • Amplification: Used in audio and signal amplification circuits due to its high hFE.
  • Switching Circuits: Efficiently controls relays, LEDs, and inductive loads with low VCE(sat).
  • Automotive Electronics: Compliant with harsh environments, perfect for ECU and lighting systems.

Conclusion of MJD200G

The MJD200G stands out as a versatile and reliable NPN transistor, combining high current capability, low saturation voltage, and fast switching in a compact DPAK package. Its robust performance makes it ideal for power management, motor control, and amplification tasks, while its compliance with environmental standards ensures broad applicability. Engineers seeking a cost-effective, high-efficiency BJT for medium-power applications will find the MJD200G an excellent choice.

FAQ

What is MJD200G?
MJD200G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does MJD200G support?
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