


onsemi
MJD2955-1G
276-MJD2955-1G
PDF Datasheet
10 A, 60 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector-emitter Voltage-Max
8V
Current Rating
-10A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
2MHz
MJD2955-1G Description
Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 1.75 W Through Hole IPAK
FAQ
What operating temperature range does MJD2955-1G support?
MJD2955-1G has an operating temperature range of 150°C.
Is MJD2955-1G currently in stock?
Are there related or alternative parts for MJD2955-1G?
What is MJD2955-1G?
What package or case is MJD2955-1G available in?



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










