onsemi_MJD3055T4G
original

onsemi
MJD3055T4G

276-MJD3055T4G
PDF Datasheet
60V 10A NPN BJT Power Transistor, DPAK, 2MHz
15 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
8V
Current Rating
10A
Emitter Base Voltage (VEBO)
5V
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MJD3055T4G Description

The MJD3055T4G is a high-power Darlington transistor offered by ON Semiconductor. It is designed to provide high current gain and high power handling capabilities in a compact package. Here is a description of the model, its features, and applications:

Model: MJD3055T4G

Description:

The MJD3055T4G is an NPN Darlington transistor with a plastic encapsulated package. It is designed for applications that require high current gain and high power handling in a small form factor.

Features:

  1. High Current Gain: The MJD3055T4G offers a high current gain (hFE) of up to 5000, making it suitable for applications that require high current amplification.

  2. High Power Handling: The transistor can handle a high collector-emitter saturation voltage (Vce(sat)) of -1.4V at IC=5.0A, making it suitable for high-power applications.

  3. Thermal Stability: The MJD3055T4G features a thermal resistance (junction-to-ambient) of 100°C/W, ensuring stable operation under high-power conditions.

  4. Compact Package: The transistor comes in a TO-3P plastic encapsulated package, making it suitable for space-constrained applications.

  5. Robust Design: The MJD3055T4G is designed with a Darlington configuration, which provides improved reliability and performance compared to single transistor designs.

Applications:

  1. Motor Control: The MJD3055T4G can be used in motor control applications, such as driving DC motors in industrial and automotive systems.

  2. Power Amplifiers: The high current gain and power handling capabilities make it suitable for use in power amplifiers for audio and radio frequency (RF) applications.

  3. Switching Applications: The MJD3055T4G can be used in switching applications, such as relay drivers and high-current switches in power supply circuits.

  4. UPS Systems: The transistor can be used in uninterruptible power supply (UPS) systems for driving high-current loads during power outages.

  5. Industrial Control: The MJD3055T4G can be used in various industrial control applications, such as conveyor systems, robotic arms, and manufacturing equipment.

In summary, the MJD3055T4G is a high-power Darlington transistor that offers high current gain, high power handling capabilities, and thermal stability in a compact package. It is suitable for a wide range of applications, including motor control, power amplification, switching, UPS systems, and industrial control.

FAQ

Does MJD3055T4G have quantity-based pricing?
Yes. MJD3055T4G currently has 5 pricing tier(s), starting from 10 units.
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Availability (In Stock : 1664 )
Quantity Unit Price Ext. Price
10+ $0.45396 $4.54
30+ $0.38047 $11.41
100+ $0.35687 $35.69
500+ $0.34297 $171.48
1000+ $0.33604 $336.04
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