onsemi

MJD31T4G

The MJD31T4G is a high voltage, high-power Darlington transistor from ON Semiconductor. It is designed for use in a variety of high-power applications, including power switching, power amplification, and motor control.

Description:

The MJD31T4G is a Darlington transistor with a collector-emitter voltage (VCEO) of 4000V, a continuous collector current (IC) of 2A, and a power dissipation (PD) of 150W. It is housed in a TO-3P metal case, which provides excellent heat dissipation and allows for easy mounting and installation.

Features:

• High collector-emitter voltage (VCEO) of 4000V
• High continuous collector current (IC) of 2A
• High power dissipation (PD) of 150W
• Darlington configuration for high current gain and low input current
• High temperature operation up to 150°C
• RoHS compliant

Applications:

The MJD31T4G is suitable for a wide range of high-power applications, including:

• Power switching in industrial control systems
• Power amplification in audio equipment
• Motor control in robotics and automation systems
• High-voltage switching in power supplies and inverters
• High-power switching in battery management systems

Overall, the MJD31T4G is a high-performance Darlington transistor that offers excellent electrical characteristics and robust construction for use in demanding high-power applications.