onsemi_MJD32CG
original

onsemi
MJD32CG

276-MJD32CG
PDF Datasheet
PNP BJT 100V 3A DPAK Power Transistor
6 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
-3A
DC Current Gain-Min (hFE)
10
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MJD32CG Description

MJD32CG Description

The MJD32CG is a high-performance PNP bipolar transistor from onsemi, designed for a wide range of applications in the electronics industry. This device boasts a 3MHz frequency transition, making it suitable for high-speed switching and amplification tasks. With a maximum collector current (Ic) of 3A and a low Vce saturation of 1.2V at 3A, the MJD32CG offers excellent current handling and low power dissipation capabilities. Its 100V collector-emitter breakdown voltage ensures robust operation in high-voltage environments.

MJD32CG Features

  • High Frequency Transition: The MJD32CG's 3MHz frequency transition allows for fast switching and high-speed amplification, making it ideal for demanding applications.
  • Low Vce Saturation: With a low Vce saturation of 1.2V at 3A, the MJD32CG provides efficient power dissipation and reduced heat generation.
  • High Collector Current: The device's maximum collector current of 3A enables it to handle high current loads, making it suitable for power amplification applications.
  • Robust Voltage Handling: The 100V collector-emitter breakdown voltage ensures reliable operation in high-voltage circuits.
  • Surface Mount Packaging: The DPAK surface mount package allows for easy integration into modern electronics designs.
  • Compliance with Regulations: The MJD32CG is REACH unaffected and RoHS3 compliant, making it suitable for use in environmentally conscious applications.

MJD32CG Applications

The MJD32CG's unique combination of high frequency, low Vce saturation, and high collector current makes it ideal for a variety of applications, including:

  • Power Amplification: The device's high current handling and low Vce saturation make it suitable for power amplification in audio and industrial applications.
  • Switching Applications: The 3MHz frequency transition allows for fast switching in digital circuits and power supplies.
  • High-Voltage Circuits: The 100V collector-emitter breakdown voltage ensures reliable operation in high-voltage environments, such as in power supplies and motor control applications.

Conclusion of MJD32CG

The MJD32CG from onsemi is a versatile and high-performance PNP bipolar transistor, offering a unique combination of high frequency, low Vce saturation, and high collector current. Its robust voltage handling, surface mount packaging, and compliance with environmental regulations make it an ideal choice for a wide range of applications in the electronics industry. With its excellent performance benefits and unique features, the MJD32CG stands out as a superior option compared to similar models, providing reliable and efficient operation in demanding applications.

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What is MJD32CG?
MJD32CG is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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