


onsemi
MJD45H11-001
276-MJD45H11-001
PDF Datasheet
8 A, 80 V PNP Power Bipolar Junction Transistor, DPAK INSERTION MOUNT, 75-TUBE
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector-emitter Voltage-Max
1V
Current Rating
-8A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
90MHz
MJD45H11-001 Description
Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole IPAK
FAQ
What voltage specification is listed for MJD45H11-001?
The listed voltage-related specification for MJD45H11-001 is 5V.
What package or case is MJD45H11-001 available in?
What is MJD45H11-001?
Is MJD45H11-001 currently in stock?
Are there related or alternative parts for MJD45H11-001?



.png)
















.png?x-oss-process=image/format,webp/resize,h_32)










