onsemi_MJD47G
original

onsemi
MJD47G

276-MJD47G
PDF Datasheet
NPN BJT 250V 1A DPAK Power Transistor
13 Weeks

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Tech Specifications

Package/Case
DPAK
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
250V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
250V
Collector-emitter Voltage-Max
1V
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
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MJD47G Description

MJD47G Description

The MJD47G is a high-performance NPN Bipolar Transistor from onsemi, designed for a wide range of applications requiring high power and voltage capabilities. With a maximum collector-emitter breakdown voltage of 250V and a maximum collector current of 1A, this device is ideal for high-power amplification and switching applications. The MJD47G features a surface-mount DPAK package, making it suitable for modern electronic designs. It is also compliant with RoHS3 standards, ensuring environmental friendliness.

MJD47G Features

  • High Power and Voltage Ratings: The MJD47G boasts a maximum power rating of 1.56W and a collector-emitter breakdown voltage of 250V, making it suitable for high-power applications.
  • High Current Handling: With a maximum collector current of 1A, this transistor can handle significant current loads.
  • Low Saturation Voltage: The MJD47G has a low Vce saturation voltage of 1V at 200mA and 1A, ensuring efficient operation.
  • High DC Current Gain: A minimum DC current gain (hFE) of 30 at 300mA and 10V ensures reliable performance.
  • Surface-Mount Package: The DPAK package allows for easy integration into surface-mount designs, improving manufacturing efficiency.
  • Compliance with Regulations: The MJD47G is compliant with RoHS3 standards and is classified as EAR99, making it suitable for international trade.

MJD47G Applications

The MJD47G is ideal for various applications due to its high power and voltage capabilities, including:

  • Power Amplifiers: Its high power and voltage ratings make it suitable for use in power amplifiers in audio and communication systems.
  • Switching Applications: The low saturation voltage and high current handling capabilities make it ideal for high-power switching applications.
  • Automotive Electronics: The MJD47G can be used in various automotive electronic systems, such as engine control units and power windows, due to its high voltage and current ratings.
  • Industrial Control Systems: Its high power and voltage capabilities make it suitable for use in industrial control systems, such as motor drives and power supplies.

Conclusion of MJD47G

The MJD47G from onsemi is a high-performance NPN Bipolar Transistor that offers a combination of high power, voltage, and current capabilities in a surface-mount DPAK package. Its unique features, such as low saturation voltage and high DC current gain, make it an ideal choice for high-power amplification and switching applications. With its compliance with RoHS3 standards and international trade regulations, the MJD47G is a reliable and environmentally friendly solution for a wide range of applications in the electronics industry.

FAQ

Are there related or alternative parts for MJD47G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does MJD47G support?
Does MJD47G have quantity-based pricing?
What is the standard lead time for MJD47G?
Is MJD47G currently in stock?
Availability (In Stock : 223 )
Quantity Unit Price Ext. Price
1+ $1.06800 $1.07
10+ $0.85372 $8.54
30+ $0.74572 $22.37
75+ $0.63943 $47.96
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