onsemi_MJD50T4
original

onsemi
MJD50T4

276-MJD50T4
PDF Datasheet
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-252-3
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1V
Collector-emitter Voltage-Max
1V
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
10MHz
Show More

MJD50T4 Description

MJD50T4 Description

The MJD50T4 is a high-performance NPN transistor designed and manufactured by onsemi. This single bipolar transistor offers a range of features that make it ideal for various power applications. With a maximum collector current of 1 A and a collector-emitter breakdown voltage of 400 V, the MJD50T4 is capable of handling high power levels while maintaining reliability and efficiency.

MJD50T4 Features

  • Frequency - Transition: 10MHz, allowing for high-speed switching in various applications.
  • Current - Collector (Ic) (Max): 1 A, enabling the transistor to handle significant power levels.
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, ensuring low power dissipation and high efficiency.
  • ECCN: EAR99, indicating that the product is not subject to export controls.
  • Mounting Type: Surface Mount, facilitating easy integration into various electronic devices.
  • Voltage - Collector Emitter Breakdown (Max): 400 V, providing robust voltage handling capabilities.
  • Supplier Device Package: DPAK, a popular package type for power transistors.
  • Transistor Type: NPN, suitable for a wide range of applications.
  • Power - Max: 15 W, allowing the transistor to handle high power levels.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, ensuring consistent performance across different operating conditions.

MJD50T4 Applications

The MJD50T4 is ideal for various power applications due to its high power handling capabilities and robust voltage ratings. Some specific use cases include:

  1. Power Amplifiers: The high current and power ratings make the MJD50T4 suitable for use in power amplifiers, where high power levels are required.
  2. Switching Regulators: The high-frequency transition capabilities allow the MJD50T4 to be used in switching regulators, where high-speed switching is necessary.
  3. Motor Control: The MJD50T4's high current and voltage ratings make it suitable for motor control applications, where high power levels and robust voltage handling are required.

Conclusion of MJD50T4

The MJD50T4 is a versatile and high-performance NPN transistor from onsemi. Its combination of high current and power ratings, robust voltage handling capabilities, and high-frequency transition capabilities make it an ideal choice for a wide range of power applications. While the product is now considered obsolete, its unique features and advantages make it a valuable component for applications where high performance and reliability are critical.

FAQ

What operating temperature range does MJD50T4 support?
MJD50T4 has an operating temperature range of 150°C.
Is MJD50T4 currently in stock?
What is MJD50T4?
Are there related or alternative parts for MJD50T4?
What voltage specification is listed for MJD50T4?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ