onsemi_MJE15031G
original

onsemi
MJE15031G

276-MJE15031G
PDF Datasheet
PNP BJT Transistor, 150V, 8A, 30MHz, TO-220
14 Weeks

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Current Rating
-8A
Emitter Base Voltage (VEBO)
5V
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MJE15031G Description

MJE15031G Description

The MJE15031G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device is known for its exceptional electrical characteristics and robustness, making it ideal for a wide range of applications. With a maximum collector-emitter breakdown voltage of 150V and a maximum collector current of 8A, the MJE15031G is capable of handling high power requirements. Its 30MHz frequency transition ensures efficient operation in high-speed circuits. The device is also designed to operate with a maximum saturation voltage of 500mV at 100mA and 1A collector current, contributing to its low power consumption.

MJE15031G Features

  • High Power Handling: Capable of managing up to 50W of power, making it suitable for high-power applications.
  • Robust Voltage Ratings: With a maximum collector-emitter voltage of 150V, it can be used in high-voltage circuits.
  • High Current Capacity: Supports a maximum collector current of 8A, ideal for applications requiring high current flow.
  • Low Saturation Voltage: Offers a low Vce saturation of 500mV, which is beneficial for power efficiency.
  • High Frequency Operation: The 30MHz frequency transition capability allows for use in high-speed digital circuits.
  • PNP Configuration: Designed as a PNP transistor, which is often preferred in specific circuit configurations.
  • Through-Hole Mounting: Facilitates easy integration into existing through-hole designs.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

MJE15031G Applications

The MJE15031G is well-suited for applications that demand high power and current handling capabilities, combined with high voltage and frequency performance. Some specific use cases include:

  • Power Amplifiers: Due to its high power and current ratings, it is ideal for use in audio and radio frequency power amplifiers.
  • Switching Regulators: Its low saturation voltage makes it suitable for switching regulator applications where efficiency is critical.
  • Motor Control: The high current and voltage ratings are beneficial in motor control circuits, especially in industrial automation.
  • High-Voltage Signal Processing: The robust voltage ratings allow for use in signal processing applications that require high-voltage tolerance.

Conclusion of MJE15031G

The MJE15031G stands out as a versatile and high-performing PNP bipolar transistor, offering a combination of high power, current, and voltage capabilities. Its unique features, such as low saturation voltage and high-frequency operation, provide advantages over similar models. It is an excellent choice for applications requiring high power and current, such as power amplifiers, switching regulators, and motor control systems. With its compliance with environmental standards and robust design, the MJE15031G is a reliable choice for engineers in the electronics industry.

FAQ

What is MJE15031G?
MJE15031G is a Single Bipolar Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for MJE15031G?
Are there related or alternative parts for MJE15031G?
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Availability (In Stock : 1355 )
Quantity Unit Price Ext. Price
10+ $1.27715 $12.77
50+ $1.13485 $56.74
100+ $0.97543 $97.54
500+ $0.90343 $451.71
1000+ $0.87085 $870.85
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