onsemi

MJE15032

MJE15032 Description

The MJE15032 is a high-performance NPN bipolar transistor manufactured by onsemi. With a maximum collector-emitter breakdown voltage of 250V and a maximum collector current of 8A, this device is designed for power applications requiring high voltage and current capabilities. The MJE15032 features a through-hole mounting type in a tube package, making it suitable for a wide range of electronic systems.

MJE15032 Features

• NPN transistor type for high current and voltage handling
• Maximum collector-emitter breakdown voltage of 250V
• Maximum collector current of 8A
• Through-hole mounting type in a tube package
• DC current gain (hFE) of 10 at 2A, 5V
• Maximum Vce saturation of 500mV at 100mA, 1A
• Moisture sensitivity level (MSL) of 1 (unlimited)
• REACH unaffected status
• EAR99 ECCN classification

MJE15032 Applications

The MJE15032 is ideal for various power electronic applications, including:

1. Switching regulators and power supplies
2. Motor control and drive circuits
3. Audio amplifiers and signal processing circuits
4. High-voltage, high-current switching applications
5. Industrial and automotive electronics

Conclusion of MJE15032

The MJE15032 is a versatile and powerful NPN bipolar transistor, offering high voltage and current capabilities in a through-hole package. Its unique features, such as a high DC current gain and low Vce saturation, make it suitable for a wide range of power electronic applications. While the product is now considered obsolete, it remains a reliable choice for existing designs and systems that require its specific performance characteristics.