onsemi_MJE2955TG
original

onsemi
MJE2955TG

276-MJE2955TG
PDF Datasheet
PNP BJT Power Transistor, 60V, 10A, 75W, TO-220
14 Weeks

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
8V
Current Rating
-10A
Emitter Base Voltage (VEBO)
5V
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MJE2955TG Description

MJE2955TG Description

The MJE2955TG from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for power amplification and switching applications. With a collector-emitter voltage (Vce) rating of 60V and a maximum collector current (Ic) of 10A, this transistor is well-suited for medium-power circuits. It features a transition frequency of 2MHz, ensuring reliable performance in high-speed switching scenarios. The device is housed in a TO-220 package, offering robust thermal dissipation with a maximum power rating of 75W. Its low collector cutoff current (700µA) and high DC current gain (hFE ≥ 20 @ 4A, 4V) enhance efficiency in demanding applications.

MJE2955TG Features

  • High Power Handling: 75W dissipation capability for sustained performance.
  • Low Saturation Voltage: 8V max @ 3.3A base current (Ib) and 10A collector current (Ic), reducing power loss.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for global markets.
  • Through-Hole Mounting: Easy integration into PCB designs with reliable mechanical stability.
  • Wide Operating Range: Suitable for industrial and automotive environments due to its rugged construction.

MJE2955TG Applications

The MJE2955TG excels in:

  • Power Supplies: Linear regulators and voltage stabilizers due to its high current capability.
  • Motor Control: Driver circuits for DC motors and solenoids.
  • Audio Amplifiers: Output stages in Class AB/B amplifiers for clean signal delivery.
  • Switching Circuits: Relay drivers and inductive load controllers with fast transition response.
  • Industrial Automation: Robust performance in harsh conditions, including thermal and electrical stress.

Conclusion of MJE2955TG

The MJE2955TG stands out as a reliable, high-power PNP transistor with excellent thermal and electrical characteristics. Its low saturation voltage, high gain, and compliance with environmental standards make it a preferred choice for engineers designing power management and switching systems. Whether in consumer electronics, automotive systems, or industrial controls, this transistor delivers consistent performance under demanding conditions.

FAQ

Does MJE2955TG have quantity-based pricing?
Yes. MJE2955TG currently has 1 pricing tier(s), starting from 3200 units.
What operating temperature range does MJE2955TG support?
Are there related or alternative parts for MJE2955TG?
What package or case is MJE2955TG available in?
What voltage specification is listed for MJE2955TG?
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