onsemi_MMBD352LT1G
original

onsemi
MMBD352LT1G

284-MMBD352LT1G
PDF Datasheet
RF Diode 7V 300mW 3-Pin SOT-23 T/R
40 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-23-3
Current Rating
10A
Element Configuration
Dual
Halogen Free
Halogen Free
Height
1.11mm
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Show More

MMBD352LT1G Description

MMBD352LT1G Description

The MMBD352LT1G is a high-performance Schottky diode manufactured by onsemi, designed for use in RF applications. This diode is known for its low capacitance and high reverse voltage capabilities, making it ideal for a wide range of electronic devices. With a capacitance of 1pF @ 0V, 1MHz, and a peak reverse voltage of 7V, the MMBD352LT1G offers superior performance in high-frequency applications.

MMBD352LT1G Features

  • Low Capacitance: The MMBD352LT1G boasts a capacitance of 1pF @ 0V, 1MHz, which is crucial for maintaining signal integrity in high-frequency circuits.
  • High Reverse Voltage: With a peak reverse voltage of 7V, this diode can handle voltage spikes without compromising performance.
  • Power Dissipation: The MMBD352LT1G can dissipate up to 225mW, making it suitable for power-sensitive applications.
  • Package: The diode comes in a compact SOT23-3 package, which is ideal for space-constrained designs.
  • RoHS Compliance: This product is compliant with RoHS3 standards, ensuring environmental responsibility in manufacturing processes.
  • Moisture Sensitivity Level: The MMBD352LT1G has an MSL of 1, indicating that it is not sensitive to moisture and can be stored in unlimited conditions.

MMBD352LT1G Applications

The MMBD352LT1G is ideal for various applications where high-frequency performance and reliability are critical:

  • RF Circuits: Due to its low capacitance and high reverse voltage, this diode is perfect for use in RF circuits where signal integrity is paramount.
  • Power Management: The diode's ability to dissipate up to 225mW makes it suitable for power management applications in electronic devices.
  • Automotive Electronics: The MMBD352LT1G can be used in automotive electronics for voltage regulation and protection against voltage spikes.
  • Telecommunications: In telecommunications equipment, this diode can be utilized for signal processing and transmission.

Conclusion of MMBD352LT1G

The MMBD352LT1G from onsemi stands out for its combination of low capacitance, high reverse voltage, and power dissipation capabilities. Its compact packaging and RoHS compliance make it a versatile choice for a wide range of applications, particularly in RF and high-frequency circuits. With its superior performance and reliability, the MMBD352LT1G is an excellent choice for engineers looking to enhance the performance of their electronic devices.

FAQ

Does MMBD352LT1G have quantity-based pricing?
Yes. MMBD352LT1G currently has 3 pricing tier(s), starting from 5 units.
What operating temperature range does MMBD352LT1G support?
Are there related or alternative parts for MMBD352LT1G?
What is the standard lead time for MMBD352LT1G?
What package or case is MMBD352LT1G available in?
Availability (In Stock : 361 )
Quantity Unit Price Ext. Price
5+ $0.06677 $0.33
50+ $0.06536 $3.27
150+ $0.06443 $9.66
ADD TO CART
QUICK ORDER
Unit Price $0.00000
Subtotal $0.00
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ