onsemi_MMBD352WT1G
original

onsemi
MMBD352WT1G

284-MMBD352WT1G
PDF Datasheet
RF Diode Schottky 7V 300mW 3-Pin SC-70 T/R
9 Weeks

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Tech Specifications

Package/Case
SOT-323-3
Current Rating
80mA
Element Configuration
Dual
Forward Current
10mA
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
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MMBD352WT1G Description

MMBD352WT1G Description

The MMBD352WT1G is a high-performance RF diode developed by onsemi, a leading manufacturer in the electronics industry. This Schottky diode is designed for applications requiring high voltage and power handling capabilities. With a capacitance of 1pF at 0V and 1MHz, it offers excellent high-frequency performance. The MMBD352WT1G has a peak reverse voltage rating of 7V and can dissipate up to 200mW of power, making it suitable for various RF applications.

MMBD352WT1G Features

  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz - Ensuring high-frequency performance
  • Voltage - Peak Reverse (Max): 7V - Provides excellent voltage handling capabilities
  • Power Dissipation (Max): 200 mW - Allows for efficient power management
  • Package: Tape & Reel (TR) - Facilitates easy integration into manufacturing processes
  • RoHS Status: ROHS3 Compliant - Meets environmental regulations for safe disposal
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of environmental conditions

MMBD352WT1G Applications

The MMBD352WT1G is ideal for various RF applications due to its high voltage and power handling capabilities. Some specific use cases include:

  1. RF Power Amplifiers: The high voltage and power ratings make it suitable for use in power amplifiers, where high voltage and power are required.
  2. RF Switches: The low capacitance and high-frequency performance make it an excellent choice for RF switches in communication systems.
  3. RF Detectors: The Schottky diode's fast switching speed and low capacitance make it ideal for use in RF detectors, where high-speed signal processing is required.

Conclusion of MMBD352WT1G

The MMBD352WT1G is a versatile and high-performance RF diode from onsemi, offering excellent voltage and power handling capabilities. Its low capacitance and high-frequency performance make it suitable for a wide range of applications, including RF power amplifiers, switches, and detectors. With its RoHS compliance and moisture sensitivity level, the MMBD352WT1G is an ideal choice for designers looking for a reliable and environmentally friendly solution in their RF applications.

FAQ

What is the standard lead time for MMBD352WT1G?
The standard lead time for MMBD352WT1G is 9 Weeks.
What package or case is MMBD352WT1G available in?
Does MMBD352WT1G have quantity-based pricing?
Is MMBD352WT1G currently in stock?
What operating temperature range does MMBD352WT1G support?
Availability (In Stock : 5382 )
Quantity Unit Price Ext. Price
50+ $0.09484 $4.74
150+ $0.08288 $12.43
500+ $0.07096 $35.48
3000+ $0.06379 $191.37
6000+ $0.06020 $361.20
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