onsemi_MMBD770T1G
original

onsemi
MMBD770T1G

284-MMBD770T1G
PDF Datasheet
RF Diode Schottky 70V 1A 120mW SC-70 T/R
8 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-323-3
Current Rating
1A
Element Configuration
Single
Forward Current
200mA
Height
0.85mm
Lead Free
Lead Free
Length
2.1mm
Max Current Rating
200mA
Show More

MMBD770T1G Description

MMBD770T1G Description

The MMBD770T1G is a high-performance Schottky diode designed and manufactured by onsemi. This RF diode offers a capacitance of 1pF at 20V and 1MHz, making it suitable for high-frequency applications. With a peak reverse voltage of 70V and a maximum current of 200mA, the MMBD770T1G can handle demanding power requirements. Its power dissipation is limited to 120mW, ensuring reliable operation in various electronic devices.

MMBD770T1G Features

  • Capacitance: 1pF @ 20V, 1MHz
  • Voltage - Peak Reverse (Max): 70V
  • Current - Max: 200mA
  • Power Dissipation (Max): 120mW
  • Package: Tape & Reel (TR)
  • RoHS Status: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

The MMBD770T1G's unique features include its low capacitance, high reverse voltage, and low power dissipation. These characteristics make it an ideal choice for high-frequency applications where performance and reliability are critical. Additionally, its RoHS3 compliance and REACH unaffected status ensure that it meets environmental regulations, making it a responsible choice for manufacturers.

MMBD770T1G Applications

The MMBD770T1G is ideal for various applications, including:

  1. RF and microwave circuits
  2. Power management systems
  3. Automotive electronics
  4. Telecommunications equipment
  5. Consumer electronics

Its low capacitance and high reverse voltage make it particularly suitable for applications requiring high-frequency switching and power handling capabilities. The MMBD770T1G's compact SC70-3 package also allows for easy integration into densely populated circuit boards.

Conclusion of MMBD770T1G

In conclusion, the MMBD770T1G is a high-performance Schottky diode that offers exceptional technical specifications and performance benefits. Its unique features, such as low capacitance and high reverse voltage, make it an ideal choice for high-frequency applications where performance and reliability are critical. With its RoHS3 compliance and REACH unaffected status, the MMBD770T1G is also an environmentally responsible option for manufacturers. Its versatility and compact package make it suitable for a wide range of applications, including RF and microwave circuits, power management systems, automotive electronics, telecommunications equipment, and consumer electronics.

FAQ

What is the standard lead time for MMBD770T1G?
The standard lead time for MMBD770T1G is 8 Weeks.
What operating temperature range does MMBD770T1G support?
What package or case is MMBD770T1G available in?
What is MMBD770T1G?
What voltage specification is listed for MMBD770T1G?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ