onsemi_MMBT2222ALT3G
original

onsemi
MMBT2222ALT3G

276-MMBT2222ALT3G
PDF Datasheet
NPN BJT Transistor, 40V VCEO, 600mA IC, SOT-23
12 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
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MMBT2222ALT3G Description

MMBT2222ALT3G Description

The MMBT2222ALT3G, manufactured by onsemi, is a high-performance NPN transistor in a compact SOT-23-3 package. This single bipolar transistor offers a range of technical specifications that make it ideal for various applications in the electronics industry. With a frequency transition of 300MHz, it provides excellent high-frequency performance, making it suitable for use in RF and microwave circuits. The maximum collector current (Ic) is 600mA, ensuring reliable operation in demanding applications. The Vce saturation (Max) @ Ib, Ic is 1V @ 50mA, 500mA, which contributes to its efficient power handling capabilities.

MMBT2222ALT3G Features

  • High Frequency Performance: With a frequency transition of 300MHz, the MMBT2222ALT3G is well-suited for high-frequency applications.
  • Efficient Power Handling: The Vce saturation (Max) @ Ib, Ic of 1V @ 50mA, 500mA ensures efficient power handling in various electronic circuits.
  • Compact Package: The SOT-23-3 package offers a compact solution for space-constrained applications.
  • Surface Mount: The surface mount technology allows for easy integration into modern electronic devices.
  • Active Product Status: As an active product, the MMBT2222ALT3G is readily available and supported by onsemi.
  • RoHS Compliance: The MMBT2222ALT3G is compliant with RoHS3 standards, making it an environmentally friendly choice for electronic devices.

MMBT2222ALT3G Applications

The MMBT2222ALT3G is ideal for a variety of applications due to its unique combination of high-frequency performance and efficient power handling. Some specific use cases include:

  1. RF and Microwave Circuits: The high frequency transition of 300MHz makes the MMBT2222ALT3G suitable for use in RF and microwave circuits, where high-frequency performance is crucial.
  2. Power Amplifiers: The efficient power handling capabilities of the MMBT2222ALT3G make it an excellent choice for power amplifiers in various electronic devices.
  3. Automotive Electronics: The compact SOT-23-3 package and surface mount technology make the MMBT2222ALT3G ideal for use in automotive electronics, where space is often limited.
  4. Consumer Electronics: The MMBT2222ALT3G can be used in a wide range of consumer electronics, including smartphones, tablets, and laptops, due to its high performance and compact package.

Conclusion of MMBT2222ALT3G

The MMBT2222ALT3G is a versatile and high-performance NPN transistor that offers a unique combination of high-frequency performance, efficient power handling, and compact packaging. Its active product status, RoHS compliance, and surface mount technology make it an ideal choice for a wide range of applications in the electronics industry. With its impressive technical specifications and performance benefits, the MMBT2222ALT3G stands out as a superior option compared to similar models, making it a valuable addition to any electronic design.

FAQ

What operating temperature range does MMBT2222ALT3G support?
MMBT2222ALT3G has an operating temperature range of 150°C.
What voltage specification is listed for MMBT2222ALT3G?
Are there related or alternative parts for MMBT2222ALT3G?
Is MMBT2222ALT3G currently in stock?
Does MMBT2222ALT3G have quantity-based pricing?
Availability (In Stock : 17449 )
Quantity Unit Price Ext. Price
20+ $0.03344 $0.67
200+ $0.02699 $5.40
600+ $0.02339 $14.03
2000+ $0.02124 $42.48
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