onsemi

MMBT2222AM3T5G

The MMBT2222AM3T5G is a high-power NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for use in a variety of applications, including audio and video frequency amplifiers, switching circuits, and general-purpose amplification.

Description:

The MMBT2222AM3T5G is an NPN transistor that is housed in a small SOT-23 plastic package. It has a maximum collector current (Ic) of 800 mA and a collector-emitter voltage (Vce) of 40 V. The device also has a current gain (hFE) that ranges from 100 to 600, depending on the specific application.

Features:

• High-power NPN transistor
• SOT-23 plastic package
• Maximum collector current (Ic) of 800 mA
• Collector-emitter voltage (Vce) of 40 V
• Current gain (hFE) ranging from 100 to 600
• Suitable for use in a wide range of applications

Applications:

The MMBT2222AM3T5G can be used in a variety of applications, including:

1. Audio and video frequency amplifiers: The device's high current gain and power handling capabilities make it well-suited for use in audio and video frequency amplifiers.
2. Switching circuits: The MMBT2222AM3T5G can be used in switching circuits, where it can handle high currents and voltages.
3. General-purpose amplification: The device's high current gain and power handling capabilities make it suitable for use in general-purpose amplification applications.
4. Digital circuits: The MMBT2222AM3T5G can also be used in digital circuits, where it can switch high currents and voltages.

Overall, the MMBT2222AM3T5G is a versatile and high-performance NPN transistor that is suitable for a wide range of applications. Its small SOT-23 package makes it ideal for use in compact and space-constrained designs.