onsemi_MMBT2907ALT3G
original

onsemi
MMBT2907ALT3G

276-MMBT2907ALT3G
PDF Datasheet
PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-23
12 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Current Rating
-600mA
Emitter Base Voltage (VEBO)
5V
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MMBT2907ALT3G Description

MMBT2907ALT3G Description

The MMBT2907ALT3G is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its exceptional technical specifications and performance benefits. With a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA, the MMBT2907ALT3G is ideal for various high-voltage and high-current applications.

MMBT2907ALT3G Features

  • Frequency - Transition: 200MHz, ensuring fast switching capabilities for high-speed applications.
  • Current - Collector (Ic) (Max): 600mA, suitable for applications requiring high current handling.
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, providing low saturation voltage for efficient power management.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, ensuring consistent performance across a wide range of operating conditions.
  • Power - Max: 300mW, enabling the device to handle high power applications.
  • Mounting Type: Surface Mount, facilitating easy integration into compact electronic designs.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations and ensuring eco-friendly manufacturing processes.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored for extended periods without degradation.

MMBT2907ALT3G Applications

The MMBT2907ALT3G is an ideal choice for various applications due to its unique combination of high voltage, high current, and high-frequency capabilities. Some specific use cases include:

  1. Power Amplifiers: The high voltage and current ratings make this device suitable for power amplifiers in audio and communication systems.
  2. Switching Regulators: The low saturation voltage and high-frequency capabilities make it an excellent choice for switching regulators in power supply applications.
  3. RF Amplifiers: The 200MHz transition frequency makes it suitable for RF amplifiers in wireless communication systems.
  4. Motor Control: The high current and voltage ratings make it ideal for motor control applications in industrial and automotive systems.

Conclusion of MMBT2907ALT3G

The MMBT2907ALT3G is a versatile and high-performance PNP bipolar transistor that offers a unique combination of high voltage, high current, and high-frequency capabilities. Its exceptional technical specifications, such as the 200MHz transition frequency and 600mA maximum collector current, make it an ideal choice for a wide range of applications, including power amplifiers, switching regulators, RF amplifiers, and motor control systems. With its RoHS compliance and unlimited moisture sensitivity level, the MMBT2907ALT3G is not only a powerful device but also an environmentally friendly and reliable option for your electronic designs.

FAQ

What is the standard lead time for MMBT2907ALT3G?
The standard lead time for MMBT2907ALT3G is 12 Weeks.
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