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MMBT2907AWT1G

The MMBT2907AWT1G is a small signal NPN transistor from ON Semiconductor. It is designed for a wide range of applications, including general purpose amplification and switching.

Description:

The MMBT2907AWT1G is an NPN bipolar junction transistor (BJT) that is available in a SOT-23 surface mount package. It has a collector-emitter voltage (Vce) of -45V, a collector current (Ic) of -600mA, and a current gain (hFE) range of 100 to 300.

Features:

• Small signal NPN transistor
• SOT-23 surface mount package
• Collector-emitter voltage (Vce) of -45V
• Collector current (Ic) of -600mA
• Current gain (hFE) range of 100 to 300

Applications:

• General purpose amplification
• Switching
• Low power audio amplification
• Low speed digital applications
• Temperature measurement and control
• Voltage regulation
• Motor control
• LED lighting
• Radio and television receivers
• Cellular phones
• Smart cards
• Optical sensors
• Bar code readers
• Modems
• Hand-held computers
• Personal digital assistants (PDAs)
• Camcorders
• Digital cameras
• Video games
• Video processing
• Power supplies
• Industrial controls
• Medical equipment
• Automotive electronics
• Aerospace and defense applications
  The MMBT2907AWT1G is a versatile and reliable transistor that can be used in a wide range of applications. Its small size and high performance make it a popular choice for designers looking for a cost-effective solution for their electronic projects.