onsemi_MMBT3416LT3G
original

onsemi
MMBT3416LT3G

276-MMBT3416LT3G
PDF Datasheet
NPN BJT Transistor, 40V, 100mA, SOT-23-3
12 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
4V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector-emitter Voltage-Max
300mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
4V
Gain Bandwidth Product
75MHz
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MMBT3416LT3G Description

MMBT3416LT3G Description

The MMBT3416LT3G is a high-performance NPN transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is known for its excellent electrical characteristics and robust performance. With a maximum collector current (Ic) of 100 mA and a maximum power dissipation of 225 mW, the MMBT3416LT3G is well-suited for a variety of applications in the electronics industry.

MMBT3416LT3G Features

  • Technical Specifications: The MMBT3416LT3G boasts a maximum collector-emitter breakdown voltage of 40 V, making it suitable for high-voltage applications. It also offers a low Vce saturation of 300 mV at 3 mA and 50 mA, ensuring efficient operation. The device's DC current gain (hFE) is a minimum of 75 at 2 mA and 4.5 V, providing reliable amplification.

  • Performance Benefits: The MMBT3416LT3G's low collector cutoff current (ICBO) of 100 nA ensures minimal leakage, which is crucial for maintaining signal integrity in sensitive applications. Its surface-mount packaging allows for compact and efficient integration into various electronic devices.

  • Unique Advantages: This device is compliant with the REACH regulations and RoHS3 standards, making it an environmentally friendly choice. The MMBT3416LT3G also has an unlimited moisture sensitivity level (MSL) of 1, which means it can be stored and handled without the need for special precautions.

MMBT3416LT3G Applications

The MMBT3416LT3G is ideal for a range of applications due to its combination of high voltage, low power, and compact form factor. It is commonly used in:

  • General-purpose amplification: In audio and signal processing circuits where high gain and low distortion are required.
  • Switching applications: Due to its ability to handle high voltages and moderate currents, the MMBT3416LT3G is suitable for power switching in various electronic devices.
  • Automotive electronics: Its robustness and ability to operate in a wide range of temperatures make it a good fit for automotive applications, such as in the control of power windows and door locks.

Conclusion of MMBT3416LT3G

In conclusion, the MMBT3416LT3G from onsemi is a versatile and reliable NPN transistor that offers a combination of high voltage handling, low power consumption, and compact packaging. Its adherence to environmental regulations and robust performance make it an excellent choice for a wide range of electronic applications, from general-purpose amplification to high-voltage switching in automotive and industrial settings.

FAQ

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Yes. MMBT3416LT3G currently has 1 pricing tier(s), starting from 90000 units.
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