onsemi_MMBT4403LT3G
original

onsemi
MMBT4403LT3G

276-MMBT4403LT3G
PDF Datasheet
PNP BJT Transistor, 40V, 600mA, 200MHz, SOT-23
30 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
5V
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MMBT4403LT3G Description

MMBT4403LT3G Description

The MMBT4403LT3G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SOT-23-3 surface-mount form factor, it offers a 40V collector-emitter breakdown voltage (VCEO) and a 600mA continuous collector current (IC), making it suitable for low-to-medium power circuits. With a transition frequency (fT) of 200MHz, it ensures efficient high-frequency operation. The device features a low VCE(sat) of 750mV @ 50mA/500mA, minimizing power loss in switching applications. Compliant with ROHS3 and REACH standards, it is ideal for environmentally conscious designs.

MMBT4403LT3G Features

  • High Current Gain (hFE): Minimum 100 @ 150mA, 2V, ensuring reliable signal amplification.
  • Low Saturation Voltage: 750mV @ 500mA, enhancing efficiency in switching applications.
  • Compact & Reliable: SOT-23-3 package with MSL1 (Unlimited) moisture sensitivity, suitable for automated assembly.
  • Broad Voltage Range: 40V VCEO supports diverse circuit requirements.
  • High Transition Frequency: 200MHz fT enables stable high-frequency performance.
  • RoHS3 & REACH Compliant: Meets stringent environmental regulations.

MMBT4403LT3G Applications

  • Switching Circuits: Ideal for load switching, relay drivers, and power management due to low VCE(sat).
  • Amplification: Suitable for audio preamps, signal conditioning, and sensor interfaces with high hFE.
  • Portable Electronics: Used in battery-powered devices thanks to low power dissipation (300mW max).
  • Automotive & Industrial Systems: Robust performance in motor control, LED drivers, and DC-DC converters.
  • High-Speed Switching: 200MHz fT supports RF and fast digital switching applications.

Conclusion of MMBT4403LT3G

The MMBT4403LT3G is a versatile PNP BJT combining high current gain, low saturation voltage, and compact packaging, making it an excellent choice for switching, amplification, and high-frequency applications. Its 40V rating and 600mA current capability provide flexibility across consumer, industrial, and automotive designs. With onsemi's reliability and compliance with RoHS3/REACH, this transistor is a dependable solution for modern electronic systems requiring efficiency and performance in a small footprint.

FAQ

Does MMBT4403LT3G have quantity-based pricing?
Yes. MMBT4403LT3G currently has 5 pricing tier(s), starting from 10 units.
What is the standard lead time for MMBT4403LT3G?
What voltage specification is listed for MMBT4403LT3G?
What operating temperature range does MMBT4403LT3G support?
What package or case is MMBT4403LT3G available in?
Availability (In Stock : 18403 )
Quantity Unit Price Ext. Price
10+ $0.04799 $0.48
100+ $0.03809 $3.81
300+ $0.03313 $9.94
1000+ $0.02941 $29.41
5000+ $0.02645 $132.25
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