onsemi
MMBT5088LT1G

276-MMBT5088LT1G
PDF Datasheet
NPN BJT Transistor, 30V VCEO, 50mA IC, 50MHz, SOT-23
13 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
500mV
Current Rating
50mA
Emitter Base Voltage (VEBO)
4.5V
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MMBT5088LT1G Description

MMBT5088LT1G Description

The MMBT5088LT1G is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is offered in a compact SOT23-3 package. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 50mA, the MMBT5088LT1G is well-suited for various low-power applications.

MMBT5088LT1G Features

  • Frequency - Transition: 50MHz, making it suitable for high-speed switching applications.
  • Current - Collector (Ic) (Max): 50mA, providing ample current handling capabilities.
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, ensuring low saturation voltage for efficient operation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V, offering consistent performance.
  • Power - Max: 300mW, allowing for operation in low-power applications.
  • RoHS Status: ROHS3 Compliant, making it suitable for environmentally friendly designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in various environmental conditions.

MMBT5088LT1G Applications

The MMBT5088LT1G is ideal for a wide range of applications, including:

  1. Low-power switching applications: Due to its low saturation voltage and high-frequency capabilities.
  2. Audio amplification: Benefiting from its high current gain and low noise characteristics.
  3. Signal amplification: Utilizing its high transition frequency for fast signal processing.
  4. Automotive electronics: Suitable for various low-power applications within the automotive industry.

Conclusion of MMBT5088LT1G

The MMBT5088LT1G is a versatile NPN bipolar junction transistor that offers a combination of high performance, reliability, and environmental compliance. Its unique features, such as low saturation voltage, high transition frequency, and RoHS compliance, make it an excellent choice for a variety of low-power applications across different industries. With its consistent performance and compact packaging, the MMBT5088LT1G is a valuable addition to any design engineer's toolkit.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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