onsemi

MMBT5089LT1G

MMBT5089LT1G Description

The MMBT5089LT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and is offered in a compact SOT23-3 package. With a maximum collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA, the MMBT5089LT1G is well-suited for a wide range of applications in the electronics industry.

MMBT5089LT1G Features

• Technical Specifications:

  • Frequency - Transition: 50MHz
  • Current - Collector (Ic) (Max): 50 mA
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Transistor Type: NPN
  • Power - Max: 300 mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Current - Collector Cutoff (Max): 50nA (ICBO)

• Performance Benefits:

  • Surface Mount technology for efficient PCB design and assembly
  • Active product status, ensuring ongoing availability and support
  • REACH Unaffected and ROHS3 Compliant, meeting environmental and regulatory standards
  • Moisture Sensitivity Level (MSL) 1, allowing for unlimited storage time before reflow soldering

• Unique Features and Advantages:

  • The MMBT5089LT1G offers a high transition frequency of 50MHz, making it suitable for high-speed switching applications.
  • Its low Vce saturation voltage of 500mV at 1mA and 10mA ensures efficient operation in low-voltage circuits.
  • The device's high minimum DC current gain of 400 at 100µA and 5V provides excellent amplification capabilities.

MMBT5089LT1G Applications

The MMBT5089LT1G is ideal for various applications where high performance, reliability, and compact packaging are required. Some specific use cases include:

• Audio Amplifiers: The device's high gain and low distortion make it suitable for audio amplification applications.
• Switching Regulators: The high transition frequency and low saturation voltage make the MMBT5089LT1G an excellent choice for switching regulator designs.
• RF Amplifiers: The device's high frequency capabilities make it suitable for use in RF amplifier circuits.
• General Purpose Amplification: The MMBT5089LT1G's versatility and performance make it an excellent choice for a wide range of general-purpose amplification applications.

Conclusion of MMBT5089LT1G

The MMBT5089LT1G is a high-performance NPN bipolar transistor that offers a unique combination of high transition frequency, low saturation voltage, and high gain. Its compact SOT23-3 package, surface mount technology, and adherence to environmental and regulatory standards make it an ideal choice for a wide range of applications in the electronics industry. With its unique features and advantages, the MMBT5089LT1G is a reliable and efficient solution for designers looking to optimize their circuit performance.