onsemi_MMBT5401LT3G
original

onsemi
MMBT5401LT3G

276-MMBT5401LT3G
PDF Datasheet
PNP BJT Transistor, 150V, 500mA, 300MHz, SOT-23
23 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
-150V
Collector-emitter Voltage-Max
500mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
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MMBT5401LT3G Description

MMBT5401LT3G Description

The MMBT5401LT3G is a high-performance PNP bipolar transistor manufactured by onsemi. It is designed for use in a wide range of applications, including general-purpose amplification, switching, and power management. With a maximum collector-emitter breakdown voltage of 150V and a maximum collector current of 500mA, this device offers excellent performance and reliability in demanding electronic systems.

MMBT5401LT3G Features

  • High Frequency Performance: The MMBT5401LT3G boasts a transition frequency of 300MHz, making it suitable for high-speed switching and amplification applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 500mV at 5mA and 50mA collector current, this device provides efficient operation in low-voltage circuits.
  • Surface Mount Packaging: The MMBT5401LT3G is available in a compact SOT23-3 package, ideal for space-constrained applications.
  • RoHS Compliance: This device is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly electronics.
  • REACH Unaffected: The MMBT5401LT3G is not affected by the REACH regulations, ensuring uninterrupted supply and availability.

MMBT5401LT3G Applications

The MMBT5401LT3G is an ideal choice for various applications, including:

  1. General-Purpose Amplification: Due to its high-frequency performance and low saturation voltage, this device is well-suited for amplifying signals in communication systems and audio equipment.
  2. Switching Applications: The MMBT5401LT3G's high current handling capability makes it suitable for use in power switching circuits, such as motor control and battery management systems.
  3. Power Management: This device can be used in power management circuits, such as voltage regulators and power distribution systems, where high efficiency and reliability are critical.

Conclusion of MMBT5401LT3G

The MMBT5401LT3G is a versatile and high-performance PNP bipolar transistor that offers excellent technical specifications and performance benefits. Its high-frequency performance, low saturation voltage, and compact packaging make it an ideal choice for a wide range of applications, including general-purpose amplification, switching, and power management. With its RoHS compliance and REACH unaffected status, this device is also suitable for environmentally friendly electronics. Overall, the MMBT5401LT3G is a reliable and efficient solution for demanding electronic systems.

FAQ

What voltage specification is listed for MMBT5401LT3G?
The listed voltage-related specification for MMBT5401LT3G is -160V.
Does MMBT5401LT3G have quantity-based pricing?
What package or case is MMBT5401LT3G available in?
What is the standard lead time for MMBT5401LT3G?
Is MMBT5401LT3G currently in stock?
Availability (In Stock : 18687 )
Quantity Unit Price Ext. Price
20+ $0.02815 $0.56
200+ $0.02239 $4.48
600+ $0.01920 $11.52
2000+ $0.01728 $34.56
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