onsemi_MMBT5551LT1G
original

onsemi
MMBT5551LT1G

276-MMBT5551LT1G
PDF Datasheet
NPN BJT Transistor 160V 0.6A SOT-23
14 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
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MMBT5551LT1G Description

The MMBT5551LT1G is a high-speed switching diode from ON Semiconductor. It is designed for use in a variety of applications, including high-speed switching and clamping circuits.

Description:

The MMBT5551LT1G is a small-signal switching diode that is available in a SOT-23 plastic surface-mount package. It has a maximum forward current of 600mA and a maximum reverse voltage of 100V. The diode has a low forward voltage drop and fast switching characteristics, making it suitable for high-speed switching applications.

Features:

  • High-speed switching diode
  • SOT-23 plastic surface-mount package
  • Maximum forward current of 600mA
  • Maximum reverse voltage of 100V
  • Low forward voltage drop
  • Fast switching characteristics

Applications:

The MMBT5551LT1G is suitable for use in a variety of applications, including:

  • High-speed switching and clamping circuits
  • Pulse transformers
  • Voltage doublers
  • Voltage regulators
  • Clamping circuits for power supplies

In summary, the MMBT5551LT1G is a high-speed switching diode that offers fast switching characteristics and a low forward voltage drop. It is available in a small-signal SOT-23 package and is suitable for use in a variety of high-speed switching and clamping applications.

FAQ

What operating temperature range does MMBT5551LT1G support?
MMBT5551LT1G has an operating temperature range of 150°C.
What is the standard lead time for MMBT5551LT1G?
What is MMBT5551LT1G?
What package or case is MMBT5551LT1G available in?
Is MMBT5551LT1G currently in stock?
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