onsemi_MMBT5551LT3G
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onsemi
MMBT5551LT3G

276-MMBT5551LT3G
PDF Datasheet
NPN BJT 160V 600mA SOT-23 Transistor
18 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
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MMBT5551LT3G Description

MMBT5551LT3G Description

The MMBT5551LT3G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is optimized for a wide range of applications, including general-purpose amplification and switching. With a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 160 V, the MMBT5551LT3G offers excellent performance in demanding electronic systems.

MMBT5551LT3G Features

  • High Current Handling: The MMBT5551LT3G can handle up to 600 mA of collector current, making it suitable for applications requiring high current drive.
  • Low Saturation Voltage: With a maximum Vce saturation of 200 mV at 5 mA and 50 mA collector current, this transistor ensures efficient operation in low-voltage circuits.
  • Surface Mount Package: The MMBT5551LT3G is available in a compact SOT23-3 surface-mount package, ideal for space-constrained designs.
  • High DC Current Gain: The minimum hFE of 80 at 10 mA collector current and 5 V collector-emitter voltage ensures reliable switching and amplification.
  • RoHS Compliance: The MMBT5551LT3G is compliant with the RoHS3 directive, making it suitable for environmentally friendly applications.

MMBT5551LT3G Applications

The MMBT5551LT3G is an ideal choice for various applications due to its high current handling, low saturation voltage, and compact package:

  • Amplifiers: The high current gain and low saturation voltage make it suitable for audio and signal amplification applications.
  • Switching Circuits: The device's ability to handle high currents and its low saturation voltage make it ideal for power switching applications.
  • Automotive Electronics: The MMBT5551LT3G's robustness and high breakdown voltage make it suitable for automotive electronic control units and power management systems.
  • Industrial Controls: In industrial settings, the MMBT5551LT3G can be used for motor control and other high-current switching applications.

Conclusion of MMBT5551LT3G

The MMBT5551LT3G from onsemi is a versatile NPN bipolar transistor that offers a combination of high current handling, low saturation voltage, and a compact surface-mount package. Its unique features make it an excellent choice for a wide range of applications, including amplifiers, switching circuits, automotive electronics, and industrial controls. With its RoHS compliance and high reliability, the MMBT5551LT3G is a trusted component for demanding electronic systems.

FAQ

Is MMBT5551LT3G currently in stock?
Yes. MMBT5551LT3G currently shows 13336 unit(s) in stock.
Are there related or alternative parts for MMBT5551LT3G?
What package or case is MMBT5551LT3G available in?
What operating temperature range does MMBT5551LT3G support?
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Availability (In Stock : 13336 )
Quantity Unit Price Ext. Price
20+ $0.04553 $0.91
200+ $0.03731 $7.46
600+ $0.03275 $19.65
2000+ $0.03000 $60.00
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