onsemi_MMBT5551M3T5G
original

onsemi
MMBT5551M3T5G

276-MMBT5551M3T5G
PDF Datasheet
High Voltage NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL
21 Weeks

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Tech Specifications

Package/Case
SOT-723-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Emitter Base Voltage (VEBO)
6V
Lead Free
Lead Free
Max Breakdown Voltage
160V
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MMBT5551M3T5G Description

MMBT5551M3T5G Description

The MMBT5551M3T5G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for surface-mount applications. Packaged in SOT-723, this compact transistor offers a collector-emitter breakdown voltage (VCEO) of 160V and a maximum collector current (IC) of 60mA, making it suitable for low-power switching and amplification tasks. With a low VCE(sat) of 200mV at 5mA base current and 50mA collector current, it ensures efficient operation in energy-sensitive designs. The device boasts a minimum DC current gain (hFE) of 80 at 10mA and 5V, ensuring reliable signal amplification.

MMBT5551M3T5G Features

  • High Voltage Tolerance: 160V VCEO for robust performance in high-voltage circuits.
  • Low Saturation Voltage: 200mV @ 5mA IB, 50mA IC minimizes power loss.
  • Compact SOT-723 Package: Ideal for space-constrained PCB designs.
  • Low Leakage Current: Collector cutoff current as low as 50nA enhances efficiency.
  • Wide Operating Range: Supports -55°C to +150°C junction temperatures.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory standards.

MMBT5551M3T5G Applications

This transistor excels in:

  • High-Voltage Signal Amplification: Audio preamps, sensor interfaces.
  • Switching Circuits: Relay drivers, LED drivers, and low-power load control.
  • Portable Electronics: Battery-operated devices requiring minimal power dissipation.
  • Industrial Control Systems: Automation and precision control due to its stable hFE.
  • Telecom & Networking: Signal conditioning in communication modules.

Conclusion of MMBT5551M3T5G

The MMBT5551M3T5G stands out for its high-voltage capability, low saturation loss, and compact form factor, making it a versatile choice for modern electronics. Its balance of performance, efficiency, and reliability makes it ideal for designers seeking a cost-effective solution for amplification and switching in demanding environments. With onsemi’s proven quality and compliance with global standards, this transistor is a dependable component for both industrial and consumer applications.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 28 )
Quantity Unit Price Ext. Price
10+ $0.06263 $0.63
100+ $0.04928 $4.93
300+ $0.04261 $12.78
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