The MMBT6427LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for use in a wide range of applications, including general-purpose amplification and switching.
The MMBT6427LT1G is an NPN transistor that is housed in an SOT-23 plastic surface-mount package. It features a high current gain (hFE) and low collector-emitter saturation voltage (VCE(sat)), making it suitable for use in a variety of applications.
The MMBT6427LT1G is suitable for use in a variety of applications, including:
The MMBT6427LT1G is a high-performance NPN transistor that is ideal for use in a wide range of applications. Its high current gain and low collector-emitter saturation voltage make it a popular choice for general-purpose amplification and switching applications. The SOT-23 plastic surface-mount package allows for easy integration into a variety of electronic devices, and the device's low power consumption and high reliability make it a popular choice for use in consumer electronics and industrial control systems.
Download datasheets and manufacturer documentation for MMBT6427LT1G