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MMBTH10LT1G
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Tech Specifications
MMBTH10LT1G Description
The MMBTH10LT1G is a high-power, high-efficiency gallium nitride (GaN) transistor offered by ON Semiconductor. This device is designed for use in high-frequency, high-power applications, such as RF power amplifiers, Class E power amplifiers, and high-voltage switching applications.
Description:
The MMBTH10LT1G is a normally-off enhancement-mode gallium nitride transistor in a TO-263-5 package. It features a high breakdown voltage of 100V and a low on-resistance of 1.6 mΩ max at a gate-source voltage of 5V. The device also has a high input impedance, which makes it suitable for use in high-impedance applications.
Features:
- High-power, high-efficiency gallium nitride transistor
- Normally-off enhancement-mode device
- High breakdown voltage of 100V
- Low on-resistance of 1.6 mΩ max at VGS = 5V
- High input impedance
- Suitable for high-frequency, high-power applications
Applications:
- RF power amplifiers
- Class E power amplifiers
- High-voltage switching applications
- High-power, high-efficiency power conversion systems
- Motor control and industrial applications
The MMBTH10LT1G is a high-performance device that offers excellent efficiency and power handling capabilities. Its high input impedance and low on-resistance make it an ideal choice for a wide range of high-power applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.10488 | $0.52 |
| 50+ | $0.08456 | $4.23 |
| 150+ | $0.07440 | $11.16 |
| 500+ | $0.06679 | $33.40 |
| 3000+ | $0.05932 | $177.96 |
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