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MMQA6V8T1G
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MMQA6V8T1G Description
The MMQA6V8T1G is a high voltage, high power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in electronic devices.
Description:
The MMQA6V8T1G is an N-channel MOSFET transistor with a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 8.5A. It has a low gate-source threshold voltage (Vth) of 2V to 4V and a low on-state resistance (Rds(on)) of 4.5 milliohms maximum. The device is available in a TO-263-2L package.
Features:
- High voltage and power handling capability
- Low gate-source threshold voltage for easy drive
- Low on-state resistance for high efficiency
- Suitable for use in a wide range of applications
Applications:
The MMQA6V8T1G is suitable for use in a variety of applications, including:
- Power switching and amplification in electronic devices
- Motor control and driving
- Battery protection circuits
- DC-DC converters
- Class D audio amplifiers
- Power supplies
Overall, the MMQA6V8T1G is a high performance MOSFET transistor that offers excellent voltage and current handling capabilities, making it a popular choice for a wide range of electronic applications.



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