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MMSZ5264BT1G

The MMSZ5264BT1G is a high-performance, general-purpose, silicon, medium-power, double diffused metal-oxide-semiconductor (DMOS) transistor from ON Semiconductor. This device is designed for use in a wide range of applications, including low-voltage, high-current switching and amplification tasks.

Description:

The MMSZ5264BT1G is a NPN transistor with a plastic package. It features a maximum collector current (Icm) of 5.0A and a collector-emitter voltage (Vce) of 40V. The device has a low saturation voltage (Vce(sat)) of 1.5V (maximum) at an Ic of 5.0A, which makes it suitable for low-voltage, high-current applications.

Features:

1. NPN Silicon Transistor
2. Plastic Package
3. High Current Capability: Icm of 5.0A
4. Collector-Emitter Voltage: Vce of 40V
5. Low Saturation Voltage: Vce(sat) of 1.5V (maximum) at Ic of 5.0A
6. High Switching Speed
7. Low Input Capacitance
8. Suitable for Complementary Circuits

Applications:

The MMSZ5264BT1G transistor is suitable for a wide range of applications due to its high current capability and low saturation voltage. Some of the common applications include:

1. Low-voltage, high-current switching applications
2. Power amplifiers for audio and video equipment
3. Motor control circuits
4. Switch mode power supplies (SMPS)
5. Battery charging circuits
6. Complementary circuits in various electronic devices
7. Line drivers and receivers in communication systems
8. General-purpose amplification tasks

Please note that the specific electrical characteristics and suitability of the MMSZ5264BT1G for a particular application should be verified based on the detailed datasheet provided by the manufacturer.