onsemi

MMUN2112LT1G

MMUN2112LT1G Description

The MMUN2112LT1G is a high-performance, single, pre-biased bipolar transistor designed and manufactured by onsemi. This PNP transistor is housed in a compact SOT23-3 package, making it ideal for space-constrained applications. With a maximum collector current of 100 mA and a low saturation voltage of 250 mV at 10 mA, the MMUN2112LT1G offers excellent performance and efficiency.

MMUN2112LT1G Features

• Technical Specifications:

  • Maximum Collector Current (Ic): 100 mA
  • Base Resistor (R1): 22 kOhms
  • Emitter Base Resistor (R2): 22 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 µA, 10 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Maximum Power Dissipation: 246 mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5 mA, 10 V
  • Current - Collector Cutoff (Max): 500 nA

• Performance Benefits:

  • Low saturation voltage for high efficiency
  • High current gain for reliable switching
  • Compact SOT23-3 package for space-saving designs

• Unique Advantages:

  • Pre-biased design simplifies circuit design and reduces external components
  • Moisture Sensitivity Level (MSL) 1, suitable for harsh environments
  • RoHS3 compliant, suitable for environmentally friendly applications

MMUN2112LT1G Applications

The MMUN2112LT1G is ideal for a wide range of applications, including:

1. Automotive Electronics: Due to its high voltage and current ratings, the MMUN2112LT1G is suitable for automotive electronics, such as power windows, seat controls, and lighting systems.
2. Industrial Controls: The low saturation voltage and high efficiency make it ideal for industrial control systems, including motor drives and sensor interfaces.
3. Consumer Electronics: Its compact size and low power consumption make it suitable for consumer electronics, such as smartphones, tablets, and wearable devices.
4. Telecommunications: The MMUN2112LT1G can be used in telecommunications equipment, such as routers, switches, and base stations, for signal amplification and switching.

Conclusion of MMUN2112LT1G

The MMUN2112LT1G is a versatile, high-performance pre-biased bipolar transistor that offers excellent technical specifications and performance benefits. Its unique features, such as pre-biased design, low saturation voltage, and compact package, make it an ideal choice for a wide range of applications in automotive, industrial, consumer, and telecommunications markets. With its RoHS3 compliance and moisture sensitivity level 1, the MMUN2112LT1G is also suitable for environmentally friendly and harsh environment applications.