onsemi_MMUN2133LT1G
original

onsemi
MMUN2133LT1G

292-MMUN2133LT1G
PDF Datasheet
PNP Digital BJT Transistor, 50V, 100mA, SOT-23
6 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
-100mA
Halogen Free
Halogen Free
Show More

MMUN2133LT1G Description

MMUN2133LT1G Description

The MMUN2133LT1G is a pre-biased PNP bipolar transistor offered by onsemi, designed for single applications. It is housed in a compact SOT23-3 package, making it suitable for surface mount technology. This device boasts a maximum collector current (Ic) of 100 mA, ensuring efficient performance in various electronic circuits. With a maximum collector-emitter breakdown voltage of 50 V and a maximum power dissipation of 246 mW, the MMUN2133LT1G is well-suited for high-voltage and high-power applications.

MMUN2133LT1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100 mA
    • Maximum Collector-Emitter Breakdown Voltage (Vce): 50 V
    • Maximum Power Dissipation: 246 mW
    • DC Current Gain (hFE): Min 80 @ 5mA, 10V
    • Base Product Number: MMUN2133
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • RoHS Compliance: ROHS3 Compliant
    • REACH Status: REACH Unaffected
    • ECCN: EAR99
    • HTSUS: 8541.21.0095
  • Unique Features and Advantages:

    • Pre-biased design simplifies circuit design and reduces external component count
    • Low Vce saturation (250mV @ 300µA, 10mA) for efficient power management
    • Robust performance with a maximum collector cutoff current of 500nA
    • Suitable for a wide range of applications, including power management, signal amplification, and switching

MMUN2133LT1G Applications

The MMUN2133LT1G is ideal for various applications where high voltage, high power, and efficient performance are required. Some specific use cases include:

  1. Power Management: Its high voltage and power ratings make it suitable for power supply circuits, battery management systems, and voltage regulation applications.
  2. Signal Amplification: The device's high current gain and low saturation voltage make it an excellent choice for audio amplifiers, signal conditioning circuits, and sensor interfaces.
  3. Switching Applications: The MMUN2133LT1G can be used in high-voltage switching circuits, such as motor control, relay drivers, and solid-state relays.

Conclusion of MMUN2133LT1G

The MMUN2133LT1G is a versatile and high-performance pre-biased PNP bipolar transistor from onsemi. Its unique combination of high voltage, high power, and low saturation voltage makes it an excellent choice for a wide range of applications, including power management, signal amplification, and switching. With its compact SOT23-3 package and RoHS3 compliance, the MMUN2133LT1G is a reliable and eco-friendly solution for modern electronic designs.

FAQ

What operating temperature range does MMUN2133LT1G support?
MMUN2133LT1G has an operating temperature range of 150°C.
What is MMUN2133LT1G?
What package or case is MMUN2133LT1G available in?
Are there related or alternative parts for MMUN2133LT1G?
What voltage specification is listed for MMUN2133LT1G?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ