onsemi

MOCD207R2M  

Transistor, Photovoltaic Output Optoisolators

The MOCD207R2M is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications that require high current and high power handling capabilities.

Description:

The MOCD207R2M is a NPN Darlington transistor with a plastic encapsulated package. It has a collector-emitter voltage (Vce) of 2000V, a continuous collector current (Ic) of 2A, and a power dissipation (Pd) of 150W.

Features:

• High collector-emitter voltage (Vce) of 2000V
• Continuous collector current (Ic) of 2A
• Power dissipation (Pd) of 150W
• Darlington configuration for high current and power handling capabilities
• Plastic encapsulated package for ease of use in various applications

Applications:

The MOCD207R2M is suitable for use in a variety of high-power applications, including:

• Power switching and amplification in industrial control systems
• Motor control and drive systems
• High-voltage power supplies
• Audio amplifiers and other audio equipment
• Automotive and other transportation systems
• High-power switching and amplification in renewable energy systems

In summary, the MOCD207R2M is a high-power Darlington transistor that offers high current and power handling capabilities, making it suitable for a wide range of applications that require high voltage and current. Its plastic encapsulated package also makes it easy to use in various applications.

MOCD207R2M Documents

Download datasheets and manufacturer documentation for MOCD207R2M

PCN Assembly/Origin :

Mult DEV Mold/Die/Mat 18/Dec/2023      

Datasheets :

MOCD2xxM      

PCN Packaging :

Mult Devices 24/Oct/2017       Mult MSL1 Pkg Rev 20/Dec/2018      

HTML Datasheet :

MOCD2xxM      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       Material Declaration MOCD207R2M       onsemi REACH