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MOCD207R2M

The MOCD207R2M is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications that require high current and high power handling capabilities.

Description:

The MOCD207R2M is a NPN Darlington transistor with a plastic encapsulated package. It has a collector-emitter voltage (Vce) of 2000V, a continuous collector current (Ic) of 2A, and a power dissipation (Pd) of 150W.

Features:

• High collector-emitter voltage (Vce) of 2000V
• Continuous collector current (Ic) of 2A
• Power dissipation (Pd) of 150W
• Darlington configuration for high current and power handling capabilities
• Plastic encapsulated package for ease of use in various applications

Applications:

The MOCD207R2M is suitable for use in a variety of high-power applications, including:

• Power switching and amplification in industrial control systems
• Motor control and drive systems
• High-voltage power supplies
• Audio amplifiers and other audio equipment
• Automotive and other transportation systems
• High-power switching and amplification in renewable energy systems

In summary, the MOCD207R2M is a high-power Darlington transistor that offers high current and power handling capabilities, making it suitable for a wide range of applications that require high voltage and current. Its plastic encapsulated package also makes it easy to use in various applications.