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MOCD213R2M
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Tech Specifications
MOCD213R2M Description
The MOCD213R2M is a high-power Darlington transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification.
Description:
The MOCD213R2M is a Darlington transistor with a collector-emitter voltage (Vce) of 2100 volts and a continuous collector current (Ic) of 2.0 amps. It is housed in a TO-220AB package, which is suitable for both through-hole and surface-mount applications.
Features:
- High collector-emitter voltage (Vce) of 2100 volts
- Continuous collector current (Ic) of 2.0 amps
- Darlington configuration for high current gain
- Suitable for use in power switching and amplification applications
- TO-220AB package for both through-hole and surface-mount applications
Applications:
The MOCD213R2M can be used in a variety of applications, including:
- Power switching in industrial and automotive systems
- Amplification in audio and video systems
- Motor control in robotics and automation systems
- Protection circuits in power supplies and battery chargers
Overall, the MOCD213R2M is a high-power Darlington transistor that offers high voltage and current handling capabilities in a compact package. Its Darlington configuration makes it well-suited for use in power switching and amplification applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.20040 | $0.20 |
| 2500+ | $0.19220 | $480.50 |
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