German
Japanese
Portuguese
Korea
Mexico
Dutch
onsemi
MSA1162YT1G
276-MSA1162YT1G
PDF Datasheet
PNP Bipolar Transistor hFE 120 to 240, SC-59 3 LEAD, 3000-REEL
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
80MHz
MSA1162YT1G Description
Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW Surface Mount SC-59
FAQ
What voltage specification is listed for MSA1162YT1G?
The listed voltage-related specification for MSA1162YT1G is 60V.
What operating temperature range does MSA1162YT1G support?
Are there related or alternative parts for MSA1162YT1G?
What package or case is MSA1162YT1G available in?
What is MSA1162YT1G?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
