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MSB92ASWT1G  

Single Bipolar Transistors

The MSB92ASWT1G is a high-performance gallium nitride (GaN) power transistor offered by ON Semiconductor. It is designed for use in high-frequency, high-power applications, such as RF power amplifiers, Class E power amplifiers, and Class F power amplifiers.

Description:

The MSB92ASWT1G is a normally-off GaN transistor that operates at a voltage of 28V and has a drain current of 4.5A. It features a low gate charge and a high switching speed, making it suitable for use in high-frequency applications. The device is available in a 6-pin Power-FLAT™ package, which provides excellent thermal performance and ease of use.

Features:

• High-frequency operation up to 2GHz
• High-power capability with a drain current of 4.5A
• Normally-off operation for safety and reliability
• Low gate charge and high switching speed for efficient operation
• 28V operation for compatibility with a wide range of power supplies
• Available in a 6-pin Power-FLAT™ package for excellent thermal performance and ease of use

Applications:

The MSB92ASWT1G is suitable for use in a variety of high-frequency, high-power applications, including:

• RF power amplifiers for wireless communication systems
• Class E power amplifiers for efficient power conversion
• Class F power amplifiers for high-efficiency power conversion
• High-power switching applications in industrial and automotive systems
• High-frequency power conversion and control in renewable energy systems

Overall, the MSB92ASWT1G is a high-performance GaN power transistor that offers excellent performance and reliability for a wide range of high-frequency, high-power applications.

MSB92ASWT1G Documents

Download datasheets and manufacturer documentation for MSB92ASWT1G

Datasheets :

MSB92ASWT1      

HTML Datasheet :

MSB92ASWT1      

PCN Design/Specification :

Mult Dev Material Chgs 20/Dec/2018      

Environmental Information :

onsemi RoHS       Material Declaration MSB92ASWT1G       onsemi REACH