onsemi_MSC2712GT1G

onsemi
MSC2712GT1G  
Single Bipolar Transistors

onsemi
MSC2712GT1G
276-MSC2712GT1G
Ersa
onsemi-MSC2712GT1G-datasheets-8981926.pdf
TRANS NPN 50V 0.1A SC59
In Stock : 8673

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MSC2712GT1G Description

MSC2712GT1G Description

The MSC2712GT1G is a high-performance NPN bipolar transistor designed for a wide range of applications in the electronics industry. Manufactured by onsemi, this device offers exceptional technical specifications and performance benefits that set it apart from similar models. With its compact SC59 package and surface mount technology, the MSC2712GT1G is ideal for space-constrained designs and high-density PCB layouts.

MSC2712GT1G Features

  • Operating Temperature: The MSC2712GT1G can operate at a maximum junction temperature of 150°C (TJ), ensuring reliable performance in demanding environments.
  • Frequency - Transition: This transistor has a transition frequency of 50MHz, making it suitable for high-speed switching applications.
  • Current - Collector (Ic) (Max): The maximum collector current is 100 mA, providing ample current handling capabilities for various applications.
  • Vce Saturation (Max) @ Ib, Ic: The saturation voltage is only 500mV at 10mA and 100mA, ensuring low power dissipation and high efficiency.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The minimum current gain is 200 at 2mA and 6V, providing consistent performance across different operating conditions.
  • Power - Max: The maximum power dissipation is 200 mW, allowing for efficient operation in various applications.
  • Voltage - Collector Emitter Breakdown (Max): The maximum collector-emitter breakdown voltage is 50V, ensuring robust operation in high-voltage environments.
  • Moisture Sensitivity Level (MSL): The MSC2712GT1G has an MSL of 1 (Unlimited), making it suitable for use in humid conditions without the need for additional moisture protection.

MSC2712GT1G Applications

The MSC2712GT1G is ideal for a variety of applications due to its unique combination of technical specifications and performance benefits. Some specific use cases include:

  1. Audio Amplifiers: The high-frequency performance and low saturation voltage make it suitable for audio amplification applications, providing clear and distortion-free sound reproduction.
  2. Switching Regulators: The high transition frequency and low saturation voltage make it an excellent choice for switching regulator applications, where high efficiency and fast switching times are critical.
  3. RF Amplifiers: The MSC2712GT1G's high-frequency capabilities make it suitable for use in RF amplifiers, where high gain and low noise are essential.
  4. Motor Control: The high current handling capabilities and robust voltage ratings make it ideal for motor control applications, where high power and reliable operation are required.

Conclusion of MSC2712GT1G

The MSC2712GT1G is a versatile and high-performance NPN bipolar transistor that offers exceptional technical specifications and performance benefits. Its unique combination of features, such as high-frequency performance, low saturation voltage, and high current handling capabilities, make it an ideal choice for a wide range of applications in the electronics industry. With its compact SC59 package and surface mount technology, the MSC2712GT1G is well-suited for space-constrained designs and high-density PCB layouts, ensuring reliable operation and efficient performance in demanding environments.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

MSC2712GT1G Documents

Download datasheets and manufacturer documentation for MSC2712GT1G

Ersa Mult Dev 24/Apr/2020      
Ersa MSC2712 G,Y T1      
Ersa MSC2712 G,Y T1      
Ersa Copper Wire 29/Oct/2009      
Ersa onsemi RoHS       onsemi REACH       Material Declaration MSC2712GT1G      

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