onsemi_MSD601-RT1G
original

onsemi
MSD601-RT1G

276-MSD601-RT1G
PDF Datasheet
NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL
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Tech Specifications

Package/Case
TO-236-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
7V
hFE Min
210
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MSD601-RT1G Description

MSD601-RT1G Description

The MSD601-RT1G is a high-performance NPN single bipolar transistor designed and manufactured by onsemi. This device is known for its excellent electrical characteristics, making it suitable for various applications in the electronics industry. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, the MSD601-RT1G offers reliable performance in demanding environments.

MSD601-RT1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Collector-emitter breakdown voltage (Vce): 50 V
    • Maximum saturation voltage (Vce Saturation): 500 mV @ 10mA, 100mA
    • Maximum power dissipation: 200 mW
    • Minimum DC current gain (hFE): 210 @ 2mA, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface mount technology for easy integration into modern electronic designs
    • RoHS3 compliant, making it suitable for environmentally friendly applications
    • REACH unaffected, ensuring compliance with European chemical regulations
    • Active product status, ensuring ongoing availability and support
  • Unique Features and Advantages:

    • The MSD601-RT1G's low saturation voltage and high current gain make it an ideal choice for low-power, high-speed switching applications
    • Its unlimited moisture sensitivity level ensures reliable performance in a wide range of environmental conditions
    • The device's small SC59 package allows for space-saving designs in compact electronic devices

MSD601-RT1G Applications

The MSD601-RT1G is ideal for a variety of applications where high performance and reliability are crucial. Some specific use cases include:

  • Low-power switching applications: The low saturation voltage and high current gain make the MSD601-RT1G suitable for low-power switching circuits
  • Compact electronic devices: The small SC59 package allows for space-saving designs in compact electronic devices, such as smartphones and wearables
  • Automotive electronics: The device's high breakdown voltage and reliability make it suitable for use in automotive electronics, such as ignition systems and power management circuits
  • Industrial control systems: The MSD601-RT1G's performance characteristics make it suitable for use in industrial control systems, where reliability and performance are critical

Conclusion of MSD601-RT1G

The MSD601-RT1G is a high-performance NPN single bipolar transistor that offers excellent electrical characteristics and reliability. Its unique features, such as low saturation voltage, high current gain, and unlimited moisture sensitivity level, make it an ideal choice for a variety of applications, including low-power switching circuits, compact electronic devices, automotive electronics, and industrial control systems. With its ongoing availability and support from onsemi, the MSD601-RT1G is a reliable and cost-effective solution for demanding electronic designs.

FAQ

Is MSD601-RT1G currently in stock?
Yes. MSD601-RT1G currently shows 12532 unit(s) in stock.
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