The MSD602-RT1G is a high-performance NPN Bipolar Transistor designed and manufactured by onsemi. This device is part of the Single Bipolar Transistors category and offers a wide range of technical specifications and performance benefits. With an operating temperature of 150°C (TJ), it is suitable for a variety of high-temperature applications. The MSD602-RT1G is designed for surface mount, making it ideal for compact and space-constrained designs.
MSD602-RT1G Features
Operating Temperature: 150°C (TJ) for reliable performance in high-temperature environments.
Current - Collector (Ic) (Max): 500 mA, providing ample current handling capabilities.
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, ensuring efficient operation at various current levels.
Voltage - Collector Emitter Breakdown (Max): 50 V, offering robust voltage handling capabilities.
Power - Max: 200 mW, suitable for applications requiring moderate power dissipation.
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V, providing consistent performance across a wide range of operating conditions.
Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored and handled without special precautions.
MSD602-RT1G Applications
The MSD602-RT1G is ideal for a variety of applications due to its unique combination of technical specifications and performance benefits. Some specific use cases include:
Automotive Applications: The high operating temperature and robust voltage handling capabilities make the MSD602-RT1G suitable for automotive electronics, such as power windows, seat controls, and engine management systems.
Industrial Control Systems: The device's ability to handle high temperatures and moderate power dissipation make it ideal for use in industrial control systems, where reliability and performance are critical.
Telecommunications Equipment: The MSD602-RT1G can be used in telecommunications equipment, such as routers and switches, where high-temperature operation and moderate power dissipation are required.
Conclusion of MSD602-RT1G
The MSD602-RT1G is a versatile and high-performance NPN Bipolar Transistor that offers a unique combination of technical specifications and performance benefits. Its ability to operate at high temperatures, handle moderate power dissipation, and provide consistent performance across a wide range of operating conditions make it an ideal choice for a variety of applications, including automotive, industrial control systems, and telecommunications equipment. With its surface mount design, the MSD602-RT1G is also well-suited for compact and space-constrained designs.
Tech Specifications
Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Length
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS
Width
MSD602-RT1G Documents
Download datasheets and manufacturer documentation for MSD602-RT1G
General Announcement - 2D Barcoding (PDF) Temporary Suspension of ISO 9001 Certification for Hitachi Chemical Co., Ltd. Product Change Notification (PDF) Final Product / Process Change Notification (PDF) Initial Product / Process Change Notification (PDF)
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service