onsemi

MTW32N20E

MTW32N20E Description

The MTW32N20E from onsemi is an N-channel power MOSFET designed for high-voltage switching applications, featuring a 200V drain-to-source voltage (Vdss) and 32A continuous drain current (Id) at 25°C (Tc). This device is built using MOSFET (Metal Oxide) technology, offering robust performance in demanding environments. With a low on-resistance (Rds(on)) of 75mOhm at 16A and 10V gate drive, it ensures efficient power handling and minimal conduction losses. The TO-247 package provides excellent thermal dissipation, supporting a maximum power dissipation of 180W (Tc). Although marked as Obsolete, this MOSFET remains a reliable choice for legacy designs requiring high-voltage switching with low gate charge (Qg) and input capacitance (Ciss).

MTW32N20E Features

• High Voltage Rating: 200V Vdss for industrial and automotive applications.
• Low Rds(on): 75mOhm at 10V Vgs, reducing power losses and improving efficiency.
• High Current Capability: 32A continuous drain current (Tc) for robust power handling.
• Optimized Gate Charge: 120nC (max) at 10V Vgs, enabling fast switching and reduced drive losses.
• Thermal Performance: TO-247 package with 180W max power dissipation (Tc) for effective heat management.
• Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive circuitry.
• Reliability: REACH Unaffected and MSL 1 (Unlimited) moisture sensitivity for long-term stability.

MTW32N20E Applications

• Power Supplies: High-efficiency SMPS, PFC circuits, and DC-DC converters.
• Motor Control: Inverters and H-bridge configurations for industrial and automotive systems.
• Switching Regulators: High-voltage switching in telecom and server power modules.
• Audio Amplifiers: Class-D amplifier output stages requiring low Rds(on) and fast switching.
• Legacy Systems: Maintenance and repair of existing designs where obsolete components are still critical.

Conclusion of MTW32N20E

The MTW32N20E is a high-performance N-channel MOSFET offering a balance of high voltage tolerance, low conduction losses, and efficient thermal management. While obsolete, its low Rds(on), high current capability, and robust TO-247 package make it suitable for power electronics, motor drives, and industrial systems. Engineers working on legacy or high-reliability designs will find this MOSFET a dependable solution for demanding switching applications. For new designs, consider onsemi's latest alternatives with enhanced features.