onsemi_MUN2111T1G
original

onsemi
MUN2111T1G

292-MUN2111T1G
PDF Datasheet
PNP BJT Transistor, 50V VCEO, 100mA IC, SC Package
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Tech Specifications

Package / Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector - Emitter Voltage VCEO
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
-100mA
Halogen Free
Halogen Free
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MUN2111T1G Description

MUN2111T1G Description

The MUN2111T1G is a pre-biased PNP bipolar transistor from onsemi, designed for high-performance applications. It features a maximum collector current (Ic) of 100 mA, ensuring efficient power handling. With a base resistor (R1) of 10 kOhms and an emitter base resistor (R2) of 10 kOhms, it offers precise current control. The MUN2111T1G also boasts a low Vce saturation of 250mV at 300µA and 10mA, enabling high-speed switching.

MUN2111T1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Base resistor (R1): 10 kOhms
    • Emitter base resistor (R2): 10 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50 V
    • Power - Max: 230 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
    • Current - Collector Cutoff (Max): 500nA
  • Performance Benefits:

    • Low Vce saturation for high-speed switching
    • Precise current control with integrated resistors
    • High collector current capacity for efficient power handling
  • Unique Advantages:

    • Surface mount technology for compact design
    • Active product status for reliable availability
    • REACH unaffected and RoHS3 compliant for environmental sustainability

MUN2111T1G Applications

The MUN2111T1G is ideal for various applications where high-speed switching and efficient power handling are crucial. Some specific use cases include:

  1. Automotive Electronics: For power management and control systems in vehicles, leveraging its high current capacity and low saturation voltage.
  2. Industrial Control Systems: In motor control applications, the MUN2111T1G's high power handling and switching speed can improve system performance.
  3. Communication Systems: For signal amplification and switching in high-speed communication equipment, taking advantage of its low Vce saturation and high current gain.

Conclusion of MUN2111T1G

The MUN2111T1G from onsemi is a high-performance, pre-biased PNP bipolar transistor designed for demanding applications. Its unique combination of technical specifications, performance benefits, and unique advantages make it an ideal choice for automotive electronics, industrial control systems, and communication equipment. With its active product status, REACH unaffected, and RoHS3 compliance, the MUN2111T1G offers a reliable and sustainable solution for your electronic design needs.

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