onsemi

MUN2113T1G

MUN2113T1G Description

The MUN2113T1G, manufactured by onsemi, is a single, pre-biased bipolar transistor designed for high performance in various electronic applications. This PNP transistor offers a maximum collector current of 100 mA, making it suitable for applications requiring moderate current handling. With a maximum collector-emitter breakdown voltage of 50 V and a maximum power dissipation of 230 mW, the MUN2113T1G can handle a wide range of voltage and power requirements.

MUN2113T1G Features

• Technical Specifications:

  • Maximum Collector Current (Ic): 100 mA
  • Maximum Collector-Emitter Breakdown Voltage (Vce): 50 V
  • Maximum Power Dissipation: 230 mW
  • DC Current Gain (hFE): Min 80 @ 5mA, 10V
  • Base Product Number: MUN2113
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • RoHS Compliance: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • ECCN: EAR99
  • HTSUS: 8541.21.0095

• Unique Features and Advantages:

  • Surface Mount Technology: The MUN2113T1G utilizes surface mount technology, which allows for compact and efficient integration into modern electronic designs.
  • Pre-Biased Design: The pre-biased nature of this transistor simplifies the biasing process, reducing the complexity of circuit design and improving reliability.
  • Low Vce Saturation: With a maximum Vce saturation of 250 mV at 300 µA and 10 mA, the MUN2113T1G offers low saturation voltage, which is beneficial for applications requiring low power consumption and high efficiency.

MUN2113T1G Applications

The MUN2113T1G is ideal for a variety of applications where moderate current handling and high reliability are required. Some specific use cases include:

• Automotive Electronics: The MUN2113T1G can be used in automotive electronics for power management and control systems, taking advantage of its ability to handle moderate current and voltage.
• Industrial Controls: In industrial control systems, the MUN2113T1G can be used for signal amplification and switching applications, benefiting from its low saturation voltage and high reliability.
• Telecommunications: For telecommunications equipment, the MUN2113T1G can be employed in signal processing and amplification circuits, leveraging its moderate current handling and low power dissipation.

Conclusion of MUN2113T1G

The MUN2113T1G is a versatile and reliable single, pre-biased bipolar transistor from onsemi. Its combination of moderate current handling, low saturation voltage, and high reliability make it an excellent choice for a variety of applications in automotive, industrial, and telecommunications sectors. With its unique features and advantages, the MUN2113T1G stands out as a preferred choice for designers looking to simplify biasing processes and improve overall system performance.