onsemi_MUN5212T1G
original

onsemi
MUN5212T1G

292-MUN5212T1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
6 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

Package / Case
SC
Collector Emitter Breakdown Voltage
50V
Collector - Emitter Voltage VCEO
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Halogen Free
Halogen Free
hFE Min
60
Show More

MUN5212T1G Description

MUN5212T1G Description

The MUN5212T1G is a single, pre-biased, NPN bipolar transistor offered by onsemi. It is designed for applications requiring low power and high efficiency. The device is available in a compact SC70-3 package, making it suitable for surface-mount applications. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, the MUN5212T1G offers excellent performance in a wide range of electronic circuits.

MUN5212T1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Maximum collector-emitter breakdown voltage (Vce): 50 V
    • Maximum power dissipation: 202 mW
    • DC current gain (hFE): Min 60 @ 5mA, 10V
    • Base resistor (R1): 22 kOhms
    • Emitter resistor (R2): 2.2 kOhms
    • Maximum Vce saturation (Vcesat): 250 mV @ 300 µA, 10 mA
    • Maximum collector cutoff current (Ic cutoff): 500 nA
  • Performance Benefits:

    • Low power consumption and high efficiency
    • Compact SC70-3 package for surface-mount applications
    • Pre-biased design for ease of use in various circuits
    • Wide operating voltage range
  • Unique Features and Advantages:

    • The MUN5212T1G's pre-biased design simplifies circuit design and reduces the need for external biasing components.
    • Its low power consumption and high efficiency make it ideal for battery-powered applications.
    • The compact SC70-3 package allows for high-density integration in PCB designs.

MUN5212T1G Applications

The MUN5212T1G is ideal for a variety of applications, including:

  1. Low-power audio amplifiers
  2. Signal conditioning circuits
  3. Battery-powered devices
  4. RF and IF amplifiers
  5. General-purpose switching applications

Conclusion of MUN5212T1G

The MUN5212T1G is a versatile, pre-biased NPN bipolar transistor that offers excellent performance in low-power applications. Its compact package, low power consumption, and wide operating voltage range make it an ideal choice for a variety of electronic circuits. With its unique features and advantages, the MUN5212T1G stands out as a reliable and efficient solution for designers looking to optimize their circuits.

FAQ

What is the standard lead time for MUN5212T1G?
The standard lead time for MUN5212T1G is 6 Weeks.
Is MUN5212T1G currently in stock?
What is MUN5212T1G?
Are there related or alternative parts for MUN5212T1G?
What operating temperature range does MUN5212T1G support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ