onsemi_MUN5233T1G
original

onsemi
MUN5233T1G

292-MUN5233T1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
11 Weeks

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Tech Specifications

Package/Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
hFE Min
80
Lead Free
Lead Free
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MUN5233T1G Description

MUN5233T1G Description

The MUN5233T1G is a pre-biased NPN bipolar transistor offered by onsemi, designed for single applications. This surface-mount device features a robust set of technical specifications, making it a reliable choice for various electronic circuits. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, the MUN5233T1G delivers excellent performance in demanding environments.

MUN5233T1G Features

  • Technical Specifications: The MUN5233T1G boasts a maximum collector current (Ic) of 100 mA, ensuring efficient power handling. Its base resistor (R1) is rated at 4.7 kOhms, while the emitter-base resistor (R2) is 47 kOhms, providing stable biasing. The device also offers a low Vce saturation of 250 mV at 1mA and 10mA, contributing to its high efficiency.

  • Performance Benefits: The MUN5233T1G's maximum power rating of 202 mW and a minimum DC current gain (hFE) of 80 at 5mA and 10V make it suitable for a wide range of applications. Its low moisture sensitivity level (MSL) of 1 allows for unlimited storage time, reducing the risk of moisture-related issues.

  • Unique Advantages: The MUN5233T1G's pre-biased design simplifies circuit design and reduces the need for external biasing components. Its compact SC70-3 package is ideal for space-constrained applications, while its RoHS3 compliance ensures environmental friendliness.

MUN5233T1G Applications

The MUN5233T1G is ideal for various applications where a pre-biased NPN transistor is required. Some specific use cases include:

  1. Low-Power Amplifiers: The MUN5233T1G's low Vce saturation and high hFE make it suitable for low-power audio and signal amplification applications.

  2. Switching Circuits: The device's ability to handle up to 100 mA of collector current and its low saturation voltage make it an excellent choice for switching applications in consumer electronics.

  3. Automotive Electronics: The MUN5233T1G's robustness and low power consumption make it suitable for various automotive electronic systems, such as infotainment and lighting control.

Conclusion of MUN5233T1G

The MUN5233T1G is a versatile pre-biased NPN bipolar transistor that offers a combination of performance, reliability, and ease of use. Its unique features, such as the pre-biased design and compact packaging, make it an ideal choice for a wide range of applications, from low-power amplifiers to switching circuits in consumer electronics and automotive systems. With its excellent technical specifications and performance benefits, the MUN5233T1G is a reliable solution for demanding electronic designs.

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