onsemi_MUN5237DW1T1G
original

onsemi
MUN5237DW1T1G

293-MUN5237DW1T1G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
6 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
6
Terminal Position
DUAL
Pin Count
6
Number of Elements
2
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
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MUN5237DW1T1G Description

MUN5237DW1T1G Description

The MUN5237DW1T1G is a Bipolar Transistor Array manufactured by onsemi. This NPN dual transistor is designed for a wide range of applications requiring high performance and reliability. With a maximum collector current of 100mA, it offers excellent current handling capabilities. The device is surface mount, making it suitable for modern electronics manufacturing processes. It is also compliant with RoHS3 standards, ensuring environmental sustainability.

MUN5237DW1T1G Features

  • High Current Handling: The MUN5237DW1T1G can handle a maximum collector current of 100mA, making it suitable for high current applications.
  • Low Vce Saturation: With a maximum Vce saturation of 250mV at 300µA and 10mA, this device offers low power dissipation and high efficiency.
  • High DC Current Gain: The minimum DC current gain (hFE) is 80 at 5mA and 10V, ensuring reliable operation in various circuits.
  • Robust Voltage Ratings: The device has a maximum collector-emitter breakdown voltage of 50V, making it suitable for high voltage applications.
  • Surface Mount Technology: The MUN5237DW1T1G is designed for surface mount, allowing for compact and efficient PCB layouts.
  • Compliance with Standards: The device is RoHS3 compliant, ensuring environmental sustainability.

MUN5237DW1T1G Applications

The MUN5237DW1T1G is ideal for a variety of applications due to its high performance and reliability. Some specific use cases include:

  • Automotive Electronics: The device's high current handling and robust voltage ratings make it suitable for automotive electronics, such as power windows and seat controls.
  • Industrial Controls: The MUN5237DW1T1G can be used in industrial control systems, where high reliability and performance are critical.
  • Audio Amplifiers: The device's low Vce saturation and high DC current gain make it an excellent choice for audio amplifiers, ensuring high-quality sound reproduction.
  • Communication Systems: The MUN5237DW1T1G can be used in communication systems, such as radio frequency (RF) amplifiers and signal processing circuits.

Conclusion of MUN5237DW1T1G

The MUN5237DW1T1G is a high-performance Bipolar Transistor Array from onsemi, offering excellent current handling, low power dissipation, and robust voltage ratings. Its surface mount design and compliance with RoHS3 standards make it an ideal choice for a wide range of applications, including automotive electronics, industrial controls, audio amplifiers, and communication systems. With its unique features and advantages, the MUN5237DW1T1G stands out as a reliable and efficient solution for demanding electronics applications.

FAQ

What is MUN5237DW1T1G?
MUN5237DW1T1G is a Bipolar Transistor Arrays, Pre-Biased from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does MUN5237DW1T1G support?
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