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MUR860G

The MUR860G is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in high-power applications, such as power supplies, motor control, and automotive systems.

Description:

The MUR860G is an N-channel MOSFET with a drain-source voltage (Vds) of up to 600 volts and a continuous drain current (Id) of up to 8.5 amperes. It features a low on-state resistance (Rds(on)) of 3.5 milliohms maximum, which helps to minimize power losses and improve efficiency.

Features:

• High-power MOSFET with Vds of up to 600V and Id of up to 8.5A
• Low on-state resistance (Rds(on)) of 3.5 milliohms maximum
• Suitable for use in high-power applications such as power supplies, motor control, and automotive systems
• Robust design for reliable operation in demanding environments

Applications:

• Power supplies
• Motor control
• Automotive systems
• Industrial control
• Switch mode power supplies (SMPS)
• DC-DC converters
• Inverters
• Battery management systems

Overall, the MUR860G is a high-power MOSFET that offers excellent performance and reliability for a wide range of applications. Its low on-state resistance and high voltage and current ratings make it an ideal choice for use in demanding power conversion and control applications.