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MURD320T4G

The MURD320T4G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

Description:

The MURD320T4G is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 40V, a continuous drain current (ID) of 320A, and a pulsed drain current (IDM) of 1500A. It has a gate-source voltage (VGS) range of -1V to +10V and a threshold voltage (VTH) range of 2.5V to 4.5V. The device is available in a TO-247AC package.

Features:

• High-power MOSFET transistor
• N-channel, logic level gate drive
• Drain-source voltage (VDS) of 40V
• Continuous drain current (ID) of 320A
• Pulsed drain current (IDM) of 1500A
• Gate-source voltage (VGS) range of -1V to +10V
• Threshold voltage (VTH) range of 2.5V to 4.5V
• Available in a TO-247AC package

Applications:

The MURD320T4G is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Automotive systems
• Industrial control
• Switch mode power supplies (SMPS)
• Inverters
• Battery management systems
• High-power switching applications

The MURD320T4G's high power rating and logic level gate drive make it an ideal choice for high-power switching applications where fast switching speeds and low on-resistance are required. Its rugged design and high current handling capability also make it suitable for use in demanding automotive and industrial applications.