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MURD320T4G  

Single Diodes

The MURD320T4G is a high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

Description:

The MURD320T4G is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 40V, a continuous drain current (ID) of 320A, and a pulsed drain current (IDM) of 1500A. It has a gate-source voltage (VGS) range of -1V to +10V and a threshold voltage (VTH) range of 2.5V to 4.5V. The device is available in a TO-247AC package.

Features:

• High-power MOSFET transistor
• N-channel, logic level gate drive
• Drain-source voltage (VDS) of 40V
• Continuous drain current (ID) of 320A
• Pulsed drain current (IDM) of 1500A
• Gate-source voltage (VGS) range of -1V to +10V
• Threshold voltage (VTH) range of 2.5V to 4.5V
• Available in a TO-247AC package

Applications:

The MURD320T4G is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Automotive systems
• Industrial control
• Switch mode power supplies (SMPS)
• Inverters
• Battery management systems
• High-power switching applications

The MURD320T4G's high power rating and logic level gate drive make it an ideal choice for high-power switching applications where fast switching speeds and low on-resistance are required. Its rugged design and high current handling capability also make it suitable for use in demanding automotive and industrial applications.

MURD320T4G Documents

Download datasheets and manufacturer documentation for MURD320T4G

PCN Assembly/Origin :

Mult Dev 14/Mar/2023      

Datasheets :

MURD320, SURD8320, NRVUD320W1      

HTML Datasheet :

MURD320, SURD8320, NRVUD320W1      

Environmental Information :

onsemi RoHS       Material Declaration MURD320T4G       onsemi REACH