onsemi_MURS360BT3G
original

onsemi
MURS360BT3G

280-MURS360BT3G
PDF Datasheet
600V 3A Ultrafast Rectifier Diode, DO-214AA SMB
13 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Pin Count
2
Number of Elements
1
Diode Element Material
SILICON
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MURS360BT3G Description

MURS360BT3G is a high-power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The MURS360BT3G is a N-channel MOSFET with a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 36A. It is available in a TO-220 package, which is suitable for use in a wide range of applications.

Features:

  • High-power MOSFET with Vds of 60V and Id of 36A
  • N-channel design for use in a variety of power electronic applications
  • Available in a TO-220 package for easy integration into a circuit
  • Suitable for use in motor control, power supplies, and renewable energy systems

Applications:

  • Motor control
  • Power supplies
  • Renewable energy systems
  • Other power electronic applications

Overall, the MURS360BT3G is a high-power MOSFET that is well-suited for use in a variety of power electronic applications. Its N-channel design and TO-220 package make it a versatile and reliable choice for engineers and designers working on projects that require high-power switching capabilities.

FAQ

Does MURS360BT3G have quantity-based pricing?
Yes. MURS360BT3G currently has 5 pricing tier(s), starting from 50 units.
What is the standard lead time for MURS360BT3G?
What operating temperature range does MURS360BT3G support?
Is MURS360BT3G currently in stock?
What is MURS360BT3G?
Availability (In Stock : 10183 )
Quantity Unit Price Ext. Price
50+ $0.24224 $12.11
150+ $0.21833 $32.75
500+ $0.18848 $94.24
2500+ $0.15745 $393.63
5000+ $0.14948 $747.40
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Subtotal $0.00
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