onsemi_MVGSF1N02LT1G
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onsemi
MVGSF1N02LT1G

278-MVGSF1N02LT1G
PDF Datasheet
Single N-Channel Power MOSFET 20V, 750mA, 90mΩ MOSFET 20V 750mA 90 mOhm Single N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL
16 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Continuous Drain Current (ID)
750mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Single
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
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MVGSF1N02LT1G Description

MVGSF1N02LT1G Description

The MVGSF1N02LT1G is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor. This device is part of the Single FETs category and offers a range of features that make it suitable for various applications. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 750mA at 25°C, the MVGSF1N02LT1G is capable of handling high voltages and currents, making it ideal for demanding applications.

MVGSF1N02LT1G Features

  • Input Capacitance (Ciss): The MVGSF1N02LT1G has a maximum input capacitance of 125 pF at 5V, ensuring fast switching and minimal signal distortion.
  • Power Dissipation: With a maximum power dissipation of 400mW at ambient temperature, this MOSFET can handle high power applications without overheating.
  • Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the MVGSF1N02LT1G offers high efficiency and reliability.
  • RoHS Compliance: This device is compliant with RoHS3 standards, making it suitable for environmentally conscious applications.
  • Moisture Sensitivity Level (MSL): With an MSL of 1, the MVGSF1N02LT1G has unlimited storage time, ensuring long-term reliability.
  • Mounting Type: The surface mount design of this MOSFET allows for easy integration into compact electronic devices.
  • Rds On (Max): The maximum on-state resistance (Rds On) is 90mOhm at 1.2A and 10V, ensuring low power loss during operation.

MVGSF1N02LT1G Applications

The MVGSF1N02LT1G is ideal for a variety of applications, including:

  • Power Management: Due to its high voltage and current handling capabilities, this MOSFET is well-suited for power management applications in electronic devices.
  • Motor Control: The MVGSF1N02LT1G can be used in motor control applications, where high voltage and current are required.
  • Automotive Electronics: This MOSFET's robust performance makes it suitable for automotive electronics, where reliability and efficiency are critical.
  • Industrial Control Systems: In industrial control systems, the MVGSF1N02LT1G can be used for high-voltage switching and control.

Conclusion of MVGSF1N02LT1G

The MVGSF1N02LT1G is a versatile and high-performance N-Channel MOSFET that offers a range of benefits for demanding applications. With its high voltage and current handling capabilities, advanced technology, and compliance with environmental standards, this device is an excellent choice for power management, motor control, automotive electronics, and industrial control systems. Despite being marked as "Not For New Designs," the MVGSF1N02LT1G remains a reliable option for existing applications that require its specific performance characteristics.

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